1200 Volt N Channel MOSFET Bestirpower BCZ120N40M2 Designed for Power Conversion in Solar Inverters and ESS
Key Attributes
Model Number:
BCZ120N40M2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
65.5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.6pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
2.264nF
Output Capacitance(Coss):
93pF
Gate Charge(Qg):
122nC
Mfr. Part #:
BCZ120N40M2
Package:
TO247-4L
Product Description
Product Overview
The Bestirpower BCZ120N40M2 is a 1200 V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability. These characteristics contribute to system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort. Ideal for applications such as solar inverters, ESS, UPS, EV charging stations, server and telecom power supplies, and industrial power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
- Package Type: TO247-4L
Technical Specifications
| Parameter | Conditions | Value | Unit | ||
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain to Source Voltage (VDSS) | 1200 | V | |||
| Gate to Source Voltage (VGS) (DC) | -10 / +22 | V | |||
| Recommended Operation Gate to Source Voltage (VGSop) | -5 / +18 | V | |||
| Drain Current (ID) | VGS = 18 V (TC = 25) | 65.5 | A | ||
| Drain Current (ID) | VGS = 18 V (TC = 100) | 46.3 | A | ||
| Drain Current Pulsed (IDM) Note 1 | 211 | A | |||
| Power Dissipation (PD) | (TC = 25) | 300 | W | ||
| Derate Above 25 | 2 | W/ | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 175 | ||||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) Max. | 0.5 | /W | |||
| Thermal Resistance, Junction to Ambient (RJA) Max. | 25.24 | /W | |||
| Soldering temperature (Tsold) | wave soldering only allowed at leads | 260 | |||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | |||||
| Drain to Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1200 V, VGS = 0 V | - | 1 | A | |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1200 V, VGS = 0 V, TJ = 175 | - | 100 | A | |
| Gate-Source Leakage Current (IGSS) | VGS = +22 V, VDS = 0 V | - | 200 | nA | |
| Gate-Source Leakage Current (IGSS) | VGS = -10 V, VDS = 0 V | - | -200 | nA | |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID = 10 mA | 2 | 3.0 | 4 | V |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 30 A | - | 40 | 50 | m |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 30 A, TJ = 175 | - | 70 | - | m |
| Transconductance (gfs) | VDS = 20 V, ID = 30 A | - | 15.4 | - | S |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 800 V, VGS = 0V, f = 250 kHz | - | 2264 | - | pF |
| Output Capacitance (Coss) | - | 93 | - | pF | |
| Reverse Capacitance (Crss) | - | 5.6 | - | pF | |
| Stored Energy in Output Capacitance (Eoss) | VDS = 0 V to 800 V, VGS = 0 V | - | 70 | - | J |
| Energy Related Output Capacitance (Co(er)) | - | 219 | - | pF | |
| Time Related Output Capacitance (Co(tr)) | - | 166 | - | pF | |
| Total Gate Charge (Qg(tot)) | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, Inductive load | - | 122 | - | nC |
| Gate to Source Charge (Qgs) | - | 29 | - | nC | |
| Gate to Drain Miller Charge (Qgd) | - | 23 | - | nC | |
| Internal Gate Resistance (RG) | f = 1MHz, VAC=25mV open drain | - | 3.1 | - | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, RG = 3.3, FWD : body diode at VGS=-5V, Inductive load | - | 12.3 | - | ns |
| Turn-On Rise Time (tr) | - | 22.74 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 20.47 | - | ns | |
| Turn-Off Fall Time (tf) | - | 8.13 | - | ns | |
| Turn-on Switching Energy (Eon) | - | 401.8 | - | uJ | |
| Turn-off Switching Energy (Eoff) | - | 41.7 | - | uJ | |
| Total Switching Energy (Etot) | - | 442.5 | - | uJ | |
| Source-Drain Diode Characteristics | |||||
| Maximum Continuous Diode Forward Current (IS) | - | 72 | A | ||
| Maximum Pulsed Diode Forward Current (ISM) | - | 232 | A | ||
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 30 A | - | 4.4 | V | |
| Reverse Recovery Time (trr) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s,TC = 25 | - | 11.4 | ns | |
| Reverse Recovery Charge (Qrr) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s,TC = 25 | - | 57 | nC | |
| Peak Reverse Recovery Current (Irrm) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s,TC = 25 | - | 10 | A | |
| Reverse Recovery Time (trr) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s,TC = 175 | - | 33.4 | ns | |
| Reverse Recovery Charge (Qrr) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s,TC = 175 | - | 505 | nC | |
| Peak Reverse Recovery Current (Irrm) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s,TC = 175 | - | 29 | A | |
| Package Dimensions (TO247-4L) (Dimensions in millimeters) | |||||
| A | 4.80 | 5.00 | 5.20 | mm | |
| A1 | 2.21 | 2.41 | 2.61 | mm | |
| A2 | 1.80 | 2.00 | 2.20 | mm | |
| b | 1.06 | 1.21 | 1.36 | mm | |
| b1 | 2.33 | 2.63 | 2.93 | mm | |
| b3 | 1.07 | 1.30 | 1.60 | mm | |
| c | 0.51 | 0.61 | 0.75 | mm | |
| D | 23.30 | 23.45 | 23.60 | mm | |
| D1 | 16.25 | 16.55 | 16.85 | mm | |
| E | 15.74 | 15.94 | 16.14 | mm | |
| E1 | 13.72 | 14.02 | 14.32 | mm | |
| T1 | 2.35 | 2.50 | 2.65 | mm | |
| e | 2.54 | BSC | mm | ||
| e1 | 5.08 | BSC | mm | ||
| Q | 5.49 | 5.79 | 6.09 | mm | |
| L | 17.27 | 17.57 | 17.87 | mm | |
| L1 | 3.99 | 4.19 | 4.39 | mm | |
| p | 3.40 | 3.60 | 3.80 | mm | |
| p1 | 7.19 | REF | mm | ||
| Package Marking and Ordering Information | |||||
| Part Number | Top Marking | Package | Packing Method | Quantity | |
| BCZ120N40M2 | BCZ120N40M2 | TO247-4L | Tube | 30 units | |
2512111635_Bestirpower-BCZ120N40M2_C53152696.pdf
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