N Channel MOSFET TO263 Package 6 Milliohm RDS on 240 Amp Pulse Current ANHI AUB060N08AG Suitable for DC DC Converters

Key Attributes
Model Number: AUB060N08AG
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ
Gate Threshold Voltage (Vgs(th)):
2.95V
Reverse Transfer Capacitance (Crss@Vds):
24.24pF
Input Capacitance(Ciss):
3.73nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
55.7nC
Mfr. Part #:
AUB060N08AG
Package:
TO-263
Product Description

Product Overview

The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters, SMPS, high-speed circuits, and industrial telecom applications. Key features include low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche ruggedness.

Product Attributes

  • Brand: AUA (implied by part naming convention)
  • Channel Type: N-Channel

Technical Specifications

Part Name Package RDS(on),max (m) Qg,typ (nC) ID,pulse (A) VDS @ Tj,max (V) Marking
AUA060N08AG TO220F 6.0 55.7 240 80 8AG
AUB060N08AG TO263 6.0 55.7 240 80 8AG
AUP060N08AG TO220 6.0 55.7 240 80 8AG
AUN060N08AG DFN5x6 6.0 55.7 240 80 8AG
AUD060N08AG TO252 6.0 55.7 240 80 8AG
Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 80 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 3.4 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS 1000 nA VDS=80V, VGS=0V, Tj=25C
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance RDS(on) 6.0 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG 1.2 f=1MHz, open drain
Input capacitance Ciss 3730 pF Vds=40V,Vgs=0V, f=1MHz
Output capacitance Coss 674 pF Vds=40V,Vgs=0V, f=1MHz
Reverse transfer capacitance Crss 24.24 pF Vds=40V,Vgs=0V, f=1MHz
Turn-on delay time td(on) 16.5 ns VDD=40V,VGS=10V,RG=10, ID=20A
Rise time tr 13.7 ns VDD=40V,VGS=10V,RG=10, ID=20A
Turn-off delay time td(off) 35.9 ns VDD=40V,VGS=10V,RG=10, ID=20A
Fall time tf 13.45 ns VDD=40V,VGS=10V,RG=10, ID=20A
Gate to source charge Qgs 15.9 nC VDS=40V,VGS=0 to 10V, ID=20A
Gate to drain charge Qgd 13.3 nC VDS=40V,VGS=0 to 10V, ID=20A
Gate charge total Qg 55.7 nC VDS=40V,VGS=0 to 10V, ID=20A
Diode forward voltage VSD 0.7 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 40.9 ns VR=40V,IF=20A, diF/dt=200A/us
Reverse recovery charge Qrr 106.8 uC VR=40V,IF=20A,diF/dt=200A/us
Peak reverse recovery current Irrm -3.7 A VR=40V,IF=20A,diF/dt=200A/us

2410121609_ANHI-AUB060N08AG_C5440020.pdf

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