Low EMI Super Junction Power MOSFET Bestirpower BMW65N075UC1 Suitable for Switch Mode Power Supplies
Key Attributes
Model Number:
BMW65N075UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
45A
RDS(on):
75mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.55pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
4.64nF@100V
Pd - Power Dissipation:
312W
Gate Charge(Qg):
81nC@10V
Mfr. Part #:
BMW65N075UC1
Package:
TO247-3
Product Description
Product Overview
The BMW65N075UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to deliver exceptionally low on-resistance and gate charge. This high-efficiency device utilizes optimized charge coupling technology, providing designers with advantages such as low EMI and reduced switching loss. It is ideal for applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), LLC Half-bridge circuits, and chargers. Key features include an ultra-fast body diode, a very low Figure of Merit (FOM) for RDS(on)Qg, ease of use and drive, 100% avalanche testing, and RoHS compliance.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Value | Unit | Note |
|---|---|---|---|---|
| Model | BMW65N075UC1 | |||
| VDSS@ TJ,max | Drain to Source Voltage | 700 | V | |
| ID | Drain Current | 45 | A | |
| RDS(on),max | Static Drain to Source On Resistance | 75 | m | |
| Qg,typ | Total Gate Charge | 81 | nC | |
| VDSS | Drain to Source Breakdown Voltage | 650 | V | VGS=0V, ID=250uA |
| VGSS | Gate to Source Voltage | 30 | V | |
| ID | Drain Current (TC=25) | 45 | A | VGS=10V |
| ID | Drain Current (TC=100) | 28 | A | VGS=10V |
| IDM | Drain Current Pulsed | 135 | A | note1 |
| EAS | Single Pulse Avalanche Energy | 900 | mJ | note2 |
| dv/dt | MOSFET dv/dt Ruggedness | 50 | V/ns | VDS = 0...650V |
| Reverse Diode dv/dt | 50 | V/ns | note3 | |
| PD | Power Dissipation (TC=25) | 312 | W | |
| TJ, TSTG | Operating junction and storage temperature | -55 to 150 | ||
| IS | Continuous diode forward current (TC=25) | 45 | A | |
| IS,pulse | Diode pulsed current | 135 | A | note1 |
| EAR | Repetitive Avalanche Energy | 144 | mJ | note2 |
| IAR | Avalanche Current | 6 | A | |
| RthJC | Thermal Resistance, Junction to Case | 0.4 | /W | |
| RthJA | Thermal Resistance, Junction to Ambient | 62 | /W | |
| Tsold | Soldering temperature | 260 | wavesoldering only allowed at leads | |
| IDSS | Zero Gate Voltage Drain Current | - | 10 A | VDS=650V, VGS=0V, Tj=25C |
| IGSS | Gate-Source Leakage Current | - | 100 nA | VGS=30V |
| VGS(th) | Gate Threshold Voltage | 2.5 | 5 V | VDS=VGS, ID=250uA |
| RDS(on) | Static Drain to Source On Resistance | - | 75 m | VGS=10V, ID=22A, Tj=25 |
| RDS(on) | Static Drain to Source On Resistance | - | 206 m | VGS=10V, ID=22A, Tj=150 |
| Ciss | Input Capacitance | - | 4640 pF | VGS=0V, VDS=100V, f=1MHz |
| Coss | Output Capacitance | - | 123 pF | |
| Crss | Reverse Transfer Capacitance | - | 3.55 pF | |
| Qg(tot) | Total Gate Charge | - | 81 nC | VGS=10V, VDD=400V, ID=22A |
| Qgs | Gate to Source Charge | - | 25 nC | |
| Qgd | Gate to Drain Charge | - | 24 nC | |
| RG | Gate Resistance | - | 1 | f =1.0MHz open drain |
| td(on) | Turn-on Delay Time | - | 107 ns | ID=22A,VDD=400V, RG=25,VGS=10V |
| tr | Rise Time | - | 80 ns | |
| td(off) | Turn-off Delay Time | - | 164 ns | |
| tf | Fall Time | - | 52 ns | |
| VSD | Diode Forward Voltage | - | 1.2 V | VGS=0V,ISD=22A , Tj=25 |
| trr | Reverse Recovery Time | - | 176 ns | VR=400V, Is=22A diF/dt=100A/s |
| Qrr | Reverse Recovery Charge | - | 1.4 C | |
| Irrm | Peak Reverse Recovery Current | - | 16 A |
2508251658_Bestirpower-BMW65N075UC1_C50153971.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
