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quality ANPEC APM9435KC TRG P Channel Enhancement Mode MOSFET Designed for Performance in Portable Equipment factory
quality ANPEC APM9435KC TRG P Channel Enhancement Mode MOSFET Designed for Performance in Portable Equipment factory

ANPEC APM9435KC TRG P Channel Enhancement Mode MOSFET Designed for Performance in Portable Equipment

Key Attributes
Model Number: APM9435KC-TRG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.6A
RDS(on):
60mΩ@10V,4.6A
Gate Threshold Voltage (Vgs(th)):
2V
Number:
1 P-Channel
Pd - Power Dissipation:
2W
Mfr. Part #:
APM9435KC-TRG
Package:
SOIC-8
Product Description

Product Overview

The SINOPOWER APM9435K is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a super high dense cell design, offering reliable and rugged performance. This device is suitable for use in notebook computers, portable equipment, and battery-powered systems. It is available in lead-free and green (RoHS compliant) options.

Product Attributes

  • Brand: SINOPOWER
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Certifications: RoHS Compliant, Lead Free, Green Devices Available
  • Package Type: SOP-8
  • Assembly Material: Halogen and Lead Free Device

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDSS Drain-Source Voltage (TA = 25C unless otherwise noted) -30 V
VGSS Gate-Source Voltage ±25 V
ID* Continuous Drain Current -4.6 A
IDM* Pulsed Drain Current VGS=-10V -20 A
IS* Diode Continuous Forward Current -2 A
TJ Maximum Junction Temperature 150 C
TSTG Storage Temperature Range -55 150 C
PD* Maximum Power Dissipation TA=25C 1.75 W
PD* Maximum Power Dissipation TA=100C 0.8 W
RJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 V
IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V, TA=25°C -30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -1.5 -2 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA
RDS(ON)a Drain-Source On-State Resistance VGS=-10V, IDS=-4.6A 52 60 mΩ
VGS=-4.5V, IDS=-2A 80 95 mΩ
VSDa Diode Forward Voltage ISD=-2A, VGS=0V -0.9 -1.3 V
Gate Charge Characteristics
Qg Total Gate Charge VDS=-15V, VGS=-10V, IDS=-4.6A 10.3 14 nC
Qgs Gate-Source Charge 1.4 nC
Qgd Gate-Drain Charge 2.3 nC
Dynamic Characteristics
Ciss Input Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz 545 pF
Coss Output Capacitance 85 pF
Crss Reverse Transfer Capacitance 55 pF
td(ON) Turn-on Delay Time VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω 6 12 ns
Tr Turn-on Rise Time 8 15 ns
td(OFF) Turn-off Delay Time 25 46 ns
Tf Turn-off Fall Time 5 10 ns
trr Reverse Recovery Time IDS=-4.6A, dlSD/dt=100A/µs 11 ns
Qrr Reverse Recovery Charge 6 nC
Package Information
Package Code K : SOP-8
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
Temperature Range C : -55 to 150 °C
Unit Quantity SOP-8 Tape & Reel 2500 Units

1804240630_ANPEC-APM9435KC-TRG_C6196.pdf

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