Power MOSFET Bestirpower BMD70N360E2 Featuring Super Junction Technology for UPS and PFC Applications
Key Attributes
Model Number:
BMD70N360E2
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
11A
RDS(on):
360mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF@400V
Number:
1 N-channel
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
801pF@400V
Gate Charge(Qg):
19nC
Mfr. Part #:
BMD70N360E2
Package:
DPAK
Product Description
Product Overview
The BMD70N360E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced Super Junction technology to achieve exceptionally low on-resistance and gate charge. This device facilitates significantly higher efficiency through optimized charge coupling technology, offering designers the advantages of low EMI and reduced switching losses. It is ideally suited for applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), and chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| General Features | |||||||
| BVDSS @ TJ,max | Drain to Source Breakdown Voltage | 750 | V | ||||
| ID | Drain Current (continuous) | VGS=10V, TC = 25 | 11 | A | Fig 10 | ||
| VGS=10V, TC = 100 | 7.4 | A | |||||
| RDS(on),max | Static Drain to Source On Resistance | VGS = 10 V, ID = 4.8 ATJ = 25 | 325 | 360 | m | Fig 3 | |
| VGS = 10 V, ID = 4.8 ATJ = 150 | 813 | 900 | m | Fig 8 | |||
| Qg,typ | Total Gate Charge | VDS = 400 VID=5.5 A, VGS = 10 V | 19 | nC | Fig 6 | ||
| Absolute Maximum Ratings | |||||||
| VDSS | Drain to Source Voltage | TJ = 25 unless otherwise noted | 700 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | ||||
| ID | Drain Current (continuous) | VGS=10V, TC = 25 | 11 | A | Fig 10 | ||
| ID | Drain Current (continuous) | VGS=10V, TC = 100 | 7.4 | A | |||
| IDM | Drain Current Pulsed | 33 | A | Note1 | |||
| EAS | Single Pulsed Avalanche Energy | 245 | mJ | Note2 | |||
| IAS | Avalanche Current | 7 | A | Note2 | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | ||||
| Peak Diode Recovery dv/dt | 15 | V/ns | Note3 | ||||
| PD | Power Dissipation | TC = 25 | 114 | W | Fig 11 | ||
| Derate Above 25 | 0.9 | W/ | |||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | ||||
| Thermal Characteristics | |||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.1 | /W | ||||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | ||||
| Tsold | Soldering temperature | wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics | |||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250 uA | 700 | - | - | V | Fig 7 |
| IDSS | Zero Gate Voltage Drain Current | VDS = 700 V, VGS = 0 V | - | - | 1 | A | |
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | - | - | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250 uA | 2.0 | 3.0 | 4.0 | V | Fig 9 |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 4.8 ATJ = 25 | - | 325 | 360 | m | Fig 3 |
| VGS = 10 V, ID = 4.8 ATJ = 150 | - | 813 | 900 | m | Fig 8 | ||
| Dynamic Characteristics | |||||||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0 V, f = 250 kHz | - | 801 | - | pF | Fig 5 |
| Coss | Output Capacitance | - | 28 | - | pF | ||
| Crss | Reverse transfer capacitance | - | 3.8 | - | pF | ||
| Qg(tot) | Total Gate Charge at 10 V | VDS = 400 VID=5.5 A, VGS = 10 V | - | 19 | - | nC | Fig 6 |
| Qgs | Gate to Source Charge | - | 2.9 | - | nC | ||
| Qgd | Gate to Drain Miller Charge | - | 9.7 | - | nC | ||
| RG | Gate Resistance | f = 1 MHzOpen Drain | - | 5.6 | - | ||
| Switching Characteristics | |||||||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 | - | 16 | - | ns | |
| tr | Turn-On Rise Time | - | 6 | - | ns | ||
| td(off) | Turn-Off Delay Time | - | 29 | - | ns | ||
| tf | Turn-Off Fall Time | - | 22 | - | ns | ||
| Source-Drain Diode Characteristics | |||||||
| IS | Maximum Continuous Diode Forward Current | - | - | 11 | A | ||
| ISM | Maximum Pulsed Diode Forward Current | - | - | 33 | A | ||
| VSD | Diode Forward Voltage | VGS = 0 V, ISD = 11 A | - | 0.9 | 1.2 | V | Fig 4 |
| trr | Reverse Recovery Time | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s | - | 198 | - | ns | |
| Qrr | Reverse Recovery Charge | - | 1.93 | - | C | ||
2506162235_Bestirpower-BMD70N360E2_C49164818.pdf
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