Power Switching P Channel MOSFET BL BLM12P03 R with Low Gate Charge and Enhanced Thermal Performance

Key Attributes
Model Number: BLM12P03-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
RDS(on):
15mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
8.4W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
BLM12P03-R
Package:
PDFN-8(3.3x3.3)
Product Description

Product Overview

The BLM10P03 is a P-Channel Power MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as battery protection. Its high-density cell design contributes to lower RDS(ON), and it is available in various packages for good heat dissipation.

Product Attributes

  • Brand: Belling
  • Product Type: Power MOSFET
  • Channel Type: P-Channel
  • Technology: Advanced Trench Technology
  • Product Line: Green Product

Technical Specifications

Parameter Condition Limit Unit Package
Key Characteristics
VDS -30 V
ID Continuous -24 A PDFN3.3*3.3
ID Continuous -30 A PDFN5*6
ID Continuous -15 A SOP8
ID Continuous -40 A TO-252
RDS(ON) VGS=-10V < 10 m
RDS(ON) VGS=-4.5V < 15 m
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID (PDFN3.3*3.3) -24 A
Drain Current-Continuous ID (PDFN5*6) -30 A
Drain Current-Continuous ID (SOP8) -15 A
Drain Current-Continuous ID (TO-252) -40 A
Drain Current-Pulsed (Note 1) IDM (PDFN3.3*3.3) -96 A
Drain Current-Pulsed (Note 1) IDM (PDFN5*6) -120 A
Drain Current-Pulsed (Note 1) IDM (SOP8) -60 A
Drain Current-Pulsed (Note 1) IDM (TO-252) -160 A
Maximum Power Dissipation (Tc=25)
Power Dissipation PD (PDFN3.3*3.3) 8.4 W
Power Dissipation PD (PDFN5*6) 13 W
Power Dissipation PD (SOP8) 3.3 W
Power Dissipation PD (TO-252) 23.2 W
Operating Junction and Storage Temperature Range TJ, TSTG -55 To 150
Thermal Resistance (Junction-to-Ambient)
Thermal Resistance RJC (PDFN3.3*3.3) 15.0 /W
Thermal Resistance RJC (PDFN5*6) 9.6 /W
Thermal Resistance RJC (SOP8) 38.3 /W
Thermal Resistance RJC (TO-252) 5.4 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Drain-Source Breakdown Voltage VGS=0V, ID=-250A BVDSS -30 V
Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IDSS -1 A
Gate-Body Leakage Current VGS=±20V, VDS=0V IGSS ±100 nA
Gate Threshold Voltage VDS=VGS, ID=-250A VGS(th) -1.0 To -2.4 V
Drain-Source On-State Resistance VGS=-10V, ID=-17A (Note 2) RDS(ON) 8 To 10 m
Drain-Source On-State Resistance VGS=-4.5V, ID=-13A (Note 2) RDS(ON) 12 To 15 m
Forward Transconductance VDS=-5V, ID=-17A gFS 43 S
Dynamic Characteristics
Input Capacitance VDS=-15V, VGS=0V, f=1.0MHz CIss 2000 pF
Output Capacitance COss 290 pF
Reverse Transfer Capacitance CRss 270 pF
Switching Characteristics (Note 3)
Turn-on Delay Time VDD=-15V, ID=-17A, VGS=-10V, RGEN=3 td(on) 10 nS
Turn-on Rise Time tr 8 nS
Turn-Off Delay Time td(off) 43 nS
Turn-Off Fall Time tf 18 nS
Total Gate Charge VDS=-15V, ID=-17A, VGS=-10V Qg 36 nC
Gate-Source Charge Qgs 5.3 nC
Gate-Drain Charge Qgd 8.8 nC
Drain-Source Diode Characteristics
Diode Forward Voltage VGS=0V, IS=-1 A VSD -1.2 V
Ordering Information
Device Marking Ordering Codes Package Product Code Packing
M10P03 BLM10P03-D TO-252-2L BLM10P03 Tape Reel
M10P03 BLM10P03-R PDFN3.3*3.3 BLM10P03 Tape Reel
M10P03 BLM10P03-E SOP8 BLM10P03 Tape Reel
M10P03 BLM10P03-Q PDFN5*6 BLM10P03 Tape Reel

Notes:

  • 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
  • 3. Guaranteed by design, not subject to production.

2208221800_BL-BLM12P03-R_C2924852.pdf
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.