IGBT module AOS AOK40B120N1 featuring 1200V voltage and low VF for industrial power applications
Key Attributes
Model Number:
AOK40B120N1
Product Custom Attributes
Pd - Power Dissipation:
-
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
300ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
3.4mJ
Mfr. Part #:
AOK40B120N1
Package:
TO-247
Product Description
Product Overview
The AOK40B120N1 is a high-performance IGBT module featuring the latest Alpha IGBT (IGBT) technology. It offers a 1200V collector-emitter voltage and a continuous collector current of 40A (TC=100C). Key advantages include very low VCE(sat) and VF, high short-circuit ruggedness, very low turn-on EMI, and easy paralleling capability. Its design also boasts low gate charge (Qg) and a very soft and fast recovery anti-parallel diode, contributing to high efficiency and ruggedness in hard switching converters. The maximum junction temperature is rated at 175C. This product is suitable for applications such as motor drives and industrial UPS.
Product Attributes
- Orderable Part Number: AOK40B120N1
- Package Type: TO247
- Form: Tube
- Minimum Order Quantity: 240
Technical Specifications
| Parameter | Symbol | Value | Units | Notes |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | 1200 | V | |
| Continuous Collector Current | IC | 40 | A | TC=100C |
| Continuous Collector Current | IC | 80 | A | TC=25C |
| Pulsed Collector Current | ICM | 160 | A | Limited by TJmax |
| Gate-Emitter Voltage | VGE | 30 | V | |
| Continuous Diode Forward Current | IF | 40 | A | TC=100C |
| Diode Pulsed Current, Limited by TJmax | IFM | 160 | A | |
| Short Circuit Withstanding Time | tSC | 10 | s | VGE=15V, VCC600V, TJ175C |
| Power Dissipation | PD | 300 | W | TC=25C |
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 175 | C | |
| Maximum Diode Junction-to-Case Thermal Resistance | RJC (1) | 0.25 | C/W | |
| Maximum IGBT Junction-to-Case Thermal Resistance | RJC | 0.4 | C/W | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 30 | C/W | |
| VCE(sat) (TJ=25C) | 1.97 | V | ||
| Maximum Lead Temperature for Soldering Purpose, 1/8" from case for 5 seconds | TL | 300 | C | |
| Collector-Emitter Voltage | VCE | 1200 | V | |
| Continuous Collector Current | IC | 40 | A | TC=100C |
| Turn-Off SOA, VCE 1200V, Limited by TJmax | 160 | A |
2411192328_AOS-AOK40B120N1_C3193627.pdf
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