ASDSemi ASDM40DN20E R 40V Dual N Channel Power MOSFET with Low R DS ON and Excellent Heat Dissipation
Product Overview
The Ascend Semiconductor ASDM40DN20E is a 40V Dual N-Channel Power MOSFET designed with Trench Power LV MOSFET technology. It features an excellent package for heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Type: Dual N-Channel Power MOSFET
- Technology: Trench Power LV MOSFET
- Package: PDFN 3.3x3.3-8
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 40 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25 | 20 | A | ||
| Drain Current | ID | TC=100 | 16 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Single Pulse Avalanche Energy | EAS | 70 | mJ | |||
| Total Power Dissipation | PD | TC=25 | 21 | W | ||
| Junction-to-Case Thermal Resistance | RJC | 3.0 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Junction-to-Ambient Thermal Resistance | RJA | 35 | / W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=20A | 15 | 19 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10A | 18 | 25 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 0.7 | 1.2 | V | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHz | 800 | pF | ||
| Output Capacitance | Coss | 112 | pF | |||
| Reverse Transfer Capacitance | Crss | 94 | pF | |||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=20V,ID=20A | 23.6 | nC | ||
| Gate-Source Charge | Qgs | 4.4 | nC | |||
| Gate-Drain Charge | Qgd | 6.3 | nC | |||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 0.4 | nC | ||
| Reverse Recovery Time | trr | 7 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=20V, ID=2A,RGEN=3 | 10 | ns | ||
| Turn-on Rise Time | tr | 56 | ns | |||
| Turn-off Delay Time | tD(off) | 27 | ns | |||
| Turn-off fall Time | tf | 72 | ns | |||
Note: Pulse Test: Pulse Width≤300µs, Duty cycle ≤2%.
Note: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in² pad of 2oz copper.
Ordering Information:
| Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|
| ASDM40DN20E-R | 40DN20 | PDFN3.3*3.3-8 | Tape&Reel | 5000/Reel |
Package Outline Data (PDFN3.3*3.3-8):
| Symbol | Dimensions (unit: mm) | Min | Typ | Max |
|---|---|---|---|---|
| A | 0.70 | 0.75 | 0.80 | |
| b | 0.25 | 0.30 | 0.35 | |
| c | 0.10 | 0.15 | 0.25 | |
| D | 3.25 | 3.35 | 3.45 | |
| D1 | 3.00 | 3.10 | 3.20 | |
| D2 | 1.78 | 1.88 | 1.98 | |
| D3 | -- | 0.13 | -- | |
| E | 3.20 | 3.30 | 3.40 | |
| E1 | 3.00 | 3.15 | 3.20 | |
| E2 | 2.39 | 2.49 | 2.59 | |
| e | 0.65 | BSC | ||
| H | 0.30 | 0.39 | 0.50 | |
| L | 0.30 | 0.40 | 0.50 | |
| L1 | -- | 0.13 | -- | |
| K | 0.30 | -- | -- | |
| θ | -- | 10° | 12° | |
| M | * | 0.15 | * | * |
Note: 1. Refer to JEDEC MO-240 variation CA. 2. Dimensions "D1" and "E1" do NOT include mold flash protrusions or gate burrs. 3. Dimensions "D1" and "E1" include interterminal flash or protrusion. Interterminal flash or protrusion shall not exceed 0.25mm per side.
2410121523_ASDsemi-ASDM40DN20E-R_C2972863.pdf
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