Low RDS ON ARK micro FTP0P1N15G 150V N-Channel MOSFET for amplifier circuits and high speed line drivers
Key Attributes
Model Number:
FTP0P1N15G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
17A
RDS(on):
80mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.8V@50uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF
Number:
1 N-channel
Output Capacitance(Coss):
138pF
Pd - Power Dissipation:
80W
Input Capacitance(Ciss):
1.169nF
Gate Charge(Qg):
36.5nC@10V
Mfr. Part #:
FTP0P1N15G
Package:
TO-220AB
Product Description
ARK Microelectronics FTP0P1N15G - 150V N-Channel Enhancement Mode MOSFET
The ARK Microelectronics FTP0P1N15G is a 150V N-Channel Enhancement Mode MOSFET featuring a rugged polysilicon gate cell structure and a high-density cell design for extremely low RDS(ON). It is suitable for various applications including amplifier circuits, logic level translators, high-speed line drivers, current regulators, and battery charger applications. This product is RoHS compliant and available in a halogen-free option.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Product Code: FTP0P1N15G
- Package: TO-220AB
- Marking: 0P1N15
- Compliance: RoHS Compliant, Halogen-free Available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 150 | V | [1] |
| Drain-to-Gate Voltage | VDGX | -- | -- | 150 | V | [1] |
| Continuous Drain Current | ID | -- | -- | 17 | A | TA=25 |
| Pulsed Drain Current | IDM | -- | -- | 51 | A | [2] |
| Power Dissipation | PD | -- | -- | 80 | W | TA=25 |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ & TSTG | -55 | -- | 150 | ||
| Electrical Characteristics (TA=25 unless otherwise specified) | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 150 | -- | -- | V | VGS=0V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 10 | A | VDS=150V, VGS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 100 | nA | VGS=20V, VDS=0V |
| -- | -- | -100 | nA | VGS=-20V, VDS=0V | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 80 | -- | m | VGS=10V, ID=10A [3] |
| Gate Threshold Voltage | VGS(TH) | 2.5 | -- | 4.8 | V | VGD=0V, ID=50A |
| Forward Transconductance | gfs | -- | 14 | -- | S | VDS=5V, ID=10A |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | -- | 1169 | -- | pF | VGS=0V, VDS=50V, f=1.0MHz |
| Output Capacitance | Coss | -- | 138 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 36 | -- | pF | |
| Total Gate Charge | Qg | -- | 36.5 | -- | nC | VGS=10V, VDS=75V, ID=10A |
| Gate-to-Source Charge | Qgs | -- | 7.7 | -- | nC | |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 16.4 | -- | nC | |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | -- | 14 | -- | ns | VGS=10V, VDD=75V, ID=10A, RG=3.3 |
| Rise Time | trise | -- | 18 | -- | ns | |
| Turn-off Delay Time | td(off) | -- | 29.6 | -- | ns | |
| Fall Time | tfall | -- | 20 | -- | ns | |
| Source-Drain Diode Characteristics (TA=25 unless otherwise specified) | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.5 | V | ISD=10A, VGS=0V |
Notes:
[1] TJ=+25 to +150.
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] Pulse width380s, duty cycle2%.
2410171116_ARK-micro-FTP0P1N15G_C41432015.pdf
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