Surface Mount P Channel MOSFET ASDsemi ASDM20P09ZB-R with Excellent Power Management Capabilities
Key Attributes
Model Number:
ASDM20P09ZB-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.2nF@10V
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
48nC
Mfr. Part #:
ASDM20P09ZB-R
Package:
SOT-23-3
Product Description
Product Overview
The Ascend Semiconductor ASDM20P09ZB is a -20V P-Channel MOSFET designed for high power and current handling capabilities. It features low on-resistance values, making it suitable for PWM applications, load switching, and power management. This lead-free product is available in a surface mount SOT23-3 package.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: P-Channel MOSFET
- Lead Free: Yes
- Package: SOT23-3
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| General Features | ||||||
| RDS(ON) | VGS = -4.5V | 21 | m | |||
| RDS(ON) | VGS = -2.5V | 28 | m | |||
| Product Summary | ||||||
| VDS | -20 | V | ||||
| RDS(on),max.@ VGS=4.5 V | 21 | m | ||||
| ID | -9 | A | ||||
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-Source Voltage | -20 | V | |||
| VGSS | Gate-Source Voltage | 12 | V | |||
| ID | Continuous Drain Current | TC = 25 | -9 | A | ||
| ID | Continuous Drain Current | TC = 100 | -5 | A | ||
| IDM | Pulsed Drain Current | note1 | -15 | A | ||
| PD | Power Dissipation | TC = 25 | 1.8 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 125 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,ID= -250A | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | -1 | A | ||
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = 12V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= -250A | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | note2 | m | |||
| VGS =-4.5V, ID =-4.A | 16 | 21 | m | |||
| VGS =-2.5V, ID =-3.A | 20 | 28 | m | |||
| gFS | Forward Transconductance | VDS =-5V, ID = -6.7A | 20 | S | ||
| Ciss | Input Capacitance | VDS =-10V, VGS = 0V, f = 1.0MHz | 15 | 48 | pF | |
| Coss | Output Capacitance | 230 | pF | |||
| Crss | Reverse Transfer Capacitance | 90 | pF | |||
| Qg | Total Gate Charge | VDS = -16V, ID = -9A, VGS = -4.5V | 16 | nC | ||
| Qgs | Gate-Source Charge | 4 | nC | |||
| Qgd | Gate-Drain(Miller) Charge | 6 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD = -10V, ID = -1A, RGEN=10,VGS=-4.5V | 11 | ns | ||
| tr | Turn-on Rise Time | 18 | ns | |||
| td(off) | Turn-off Delay Time | 30 | ns | |||
| tf | Turn-off Fall Time | 10 | ns | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -1 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -10 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS = -8A | -1.2 | V | ||
Ordering and Marking Information
| Package | Marking | Ordering Device No | Package | Packing Quantity | Lot Number |
|---|---|---|---|---|---|
| SOT23-3 | 20P09 | ASDM20P09ZB-R | SOT23-3 | Tape&Reel 3000/Reel |
2410121617_ASDsemi-ASDM20P09ZB-R_C2758219.pdf
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