Dual P Channel MOSFET ARK micro FTF30P35D ideal for rugged power adaptors chargers and SMPS circuits
Key Attributes
Model Number:
FTF30P35D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
30Ω@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.84pF
Number:
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
16W
Input Capacitance(Ciss):
43.39pF
Gate Charge(Qg):
-
Mfr. Part #:
FTF30P35D
Package:
PDFN-8(3.3x3.3)
Product Description
Product Overview
The FTF30P35D is a Dual P-Channel 350V Enhancement Mode MOSFET from ARK Microelectronics, featuring proprietary advanced planar technology and a rugged polysilicon gate cell structure for fast switching speeds. It is RoHS compliant and available in halogen-free options. This MOSFET is ideal for high efficiency SMPS, adaptors/chargers, and active PFC applications.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | RDS(ON) (Max.) | BVDSS | IDSS | IGSS | VGS(TH) | CISS | COSS | CRSS | td(ON) | trise | td(OFF) | tfall | VSD |
| FTF30P35D | PDFN3333 | -350V | -0.5A | 16W | ±20V | 30 Ω | -350V | -1 µA | ±20 µA | -1 to -3V | 43.39 pF | 6.94 pF | 0.84 pF | 12 ns | 60 ns | 136 ns | 320 ns | -1.8V |
2410121530_ARK-micro-FTF30P35D_C19184459.pdf
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