Dual N Channel MOSFET ARK micro FTF15N35D 350V VDSS with advanced planar technology and halogen free option

Key Attributes
Model Number: FTF15N35D
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
1A
RDS(on):
15Ω@10V,200mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.75pF
Output Capacitance(Coss):
5.36pF
Input Capacitance(Ciss):
32.58pF
Pd - Power Dissipation:
16W
Gate Charge(Qg):
-
Mfr. Part #:
FTF15N35D
Package:
PDFN-8(3.3x3.3)
Product Description

Product Overview

The FTF15N35D is a Dual N-Channel 350V Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. Featuring a proprietary advanced planar technology and a rugged polysilicon gate cell structure, this MOSFET offers fast switching speeds. It is compliant with RoHS and available in a halogen-free option. Ideal for high efficiency SMPS, adaptors/chargers, and active PFC applications.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Origin: Chengdu, Sichuan
  • Certifications: RoHS Compliant, Halogen-free available

Technical Specifications

Part NumberPackageMarkingVDSS (V)ID (A)RDS(ON) (Max.) ()VGS(TH) (V)CISS (pF)COSS (pF)CRSS (pF)td(ON) (ns)trise (ns)td(OFF) (ns)tfall (ns)VSD (V)
FTF15N35DPDFN333315N35D3501151 - 332.585.360.75141024361.8

2410121521_ARK-micro-FTF15N35D_C19184458.pdf

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