Power Efficiency Silicon Carbide Diode Bestirpower BCH65S30D3 650V 30A for Free Wheeling Applications

Key Attributes
Model Number: BCH65S30D3
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@650V
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.45V@30A
Current - Rectified:
30A
Mfr. Part #:
BCH65S30D3
Package:
TO-220-2
Product Description

Product Overview

The BCH65S30D3 is a 650V, 30A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC diode technology for excellent low forward voltage and robustness. This diode is designed for applications demanding high power efficiency, offering benefits such as high surge current capability, no reverse recovery, and benchmark switching behavior. It is suitable for use as free-wheeling diodes in inverter stages, power factor correction, data centers, and switch-mode power supplies, contributing to system efficiency improvement, reduced size, and lower cost.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide (SiC)
  • Technology: Schottky Diode
  • Certifications: RoHS compliant / Halogen-free

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
VRRM Repetitive Peak Reverse Voltage 650 V
IF Forward Current TC = 25 72 A
IF Forward Current TC = 135 34 A
IF,SM Non-Repetitive Forward Surge Current TC = 25, tp = 10 ms 216 A
IF,SM Non-Repetitive Forward Surge Current TC = 110, tp = 10 ms 187 A
IF,RM Repetitive Peak Forward Surge Current TC = 25, tp = 10 ms 186 A
I2dt value I2t TC = 25, tp = 10 ms 233 As
I2dt value I2t TC = 110, tp = 10 ms 174 As
Ptot Power Dissipation TC = 25 254 W
Ptot Power Dissipation TC = 110 110 W
Ptot Power Dissipation TC = 150 42 W
TJ,TSTG Operating Junction and Storage Temperature -55 +175
Thermal Characteristics
RJC Thermal Resistance, Junction to Case Typ. 0.59 /W
Electrical Characteristics
VDC DC blocking voltage 650 - - V
VF Forward Voltage IF=30ATJ=25 1.45 1.8 V
VF Forward Voltage IF=30ATJ=175 1.95 - V
IR Reverse Current VR = 650 V, TJ = 25 2 20 A
IR Reverse Current VR = 650 V, TJ= 175 40 200 A
QC Total Capacitive Charge VR = 400 V, TJ = 25 85 - nC
C Total Capacitance VR = 0Vf=1MHz 2050 - pF
EC Capacitance Stored Energy VR = 400Vf=1MHz 162 - J
Capacitance Stored Energy VR = 200Vf=1MHz 21 - J
Part Number and Ordering Information
Part Number Top Marking Package Packing Method Quantity
BCH65S30D3 BCH65S30D3 TO220-2 Tube 50 units

2504101957_Bestirpower-BCH65S30D3_C46472739.pdf

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