ASDsemi ASDM12N65F-T 650V N Channel MOSFET Featuring Low Gate Charge and Avalanche Tested for Power Conversion
Key Attributes
Model Number:
ASDM12N65F-T
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9.9pF@25V
Input Capacitance(Ciss):
1.89nF@25V
Pd - Power Dissipation:
24W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
ASDM12N65F-T
Package:
TO-220F
Product Description
Product Overview
The ASDM12N65F is a 650V N-Channel Power MOSFET from Ascend Semiconductor Co., Ltd. Designed for high-efficiency power applications, this MOSFET features low gate charge, low ON resistance, and improved dv/dt capability. It is 100% avalanche tested and RoHS compliant, making it suitable for a wide range of applications including Switching Mode Power Supplies (SMPS), PWM Motor Controls, AC to DC Converters, LED Lighting, and Adapters.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Line: Ascend Semicondutor Co.,Ltd
- Compliance: RoHS compliant
- Package Type: TO-220F
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| 650 V R DS(on),Typ@ VGS=10 V | 0.65 | |||||
| I D | 12 | A | ||||
| Product Name | ASDM12N65F | |||||
| Features | ||||||
| Low Gate Charge | ||||||
| Low ON Resistance | ||||||
| Improved dv/dt Capability | ||||||
| 100% Avalanche Tested | ||||||
| Applications | ||||||
| Switching Mode Power Supplies (SMPS) | ||||||
| PWM Motor Controls | ||||||
| AC to DC Converters | ||||||
| LED Lighting | ||||||
| Adapter | ||||||
| ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise noted) | ||||||
| Drain to Source Voltage | VDS | 650 | V | |||
| Continuous Drain Current (@TC=25C) | ID | (1) | 12 | A | ||
| Continuous Drain Current (@TC=100C) | ID | (1) | 7.5 | A | ||
| Drain current pulsed | IDM | (2) | 48 | A | ||
| Gate to Source Voltage | VGS | 30 | V | |||
| Single pulsed Avalanche Energy | EAS | (3) | 576 | mJ | ||
| Peak diode Recovery dv/dt | dv/dt | (4) | 5 | V/ns | ||
| Total power dissipation (@TC=25C) | PD | 24 | W | |||
| Derating Factor above 25C | 0.19 | W/C | ||||
| Operating Junction Temperature & Storage Temperature | TSTG, TJ | -55 | +150 | C | ||
| Maximum lead temperature for soldering purpose | TL | 260 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal resistance, Junction to case (Maximum) | Rthjc | 2.1 | C/W | |||
| Thermal resistance, Junction to ambient (Maximum) | Rthja | 62 | C/W | |||
| ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified) | ||||||
| Off Characteristics | ||||||
| Drain to source breakdown voltage | BVDSS | VGS=0V, ID=250uA | 650 | -- | -- | V |
| Breakdown voltage temperature coefficient | BVDSS / TJ | ID=250uA, referenced to 25C | -- | 0.65 | -- | V/C |
| Drain to source leakage current | IDSS | VDS=650V, VGS=0V | -- | -- | 1 | uA |
| IDSS | VDS=520V, TC=125C | -- | -- | 50 | uA | |
| Gate to source leakage current, forward | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate to source leakage current, reverse | IGSS | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| Gate threshold voltage | VGS(TH) | VDS=VGS, ID=250uA | 2.5 | 3.5 | 4.5 | V |
| Drain to source on state resistance | RDS(ON) | VGS=10V, ID=6A | -- | 0.65 | 0.8 | |
| Forward Transconductance | Gfs | VDS=30V, ID=6A | -- | 9.6 | -- | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VGS=0V, VDS=25V, f=1MHz | -- | 1890 | -- | pF |
| Output capacitance | Coss | -- | 144 | -- | pF | |
| Reverse transfer capacitance | Crss | -- | 9.9 | -- | pF | |
| Turn on delay time | td(on) | VDS=325V, ID=12A, RG=25, VGS=10V | -- | 33 | -- | ns |
| Rising time | tr | -- | 41 | -- | ns | |
| Turn off delay time | td(off) | -- | 102 | -- | ns | |
| Fall time | tf | -- | 37 | -- | ns | |
| Total gate charge | Qg | VDS=520V, VGS=10V, ID=12A | -- | 38 | -- | nC |
| Gate-source charge | Qgs | -- | 9 | -- | nC | |
| Gate-drain charge | Qgd | -- | 13 | -- | nC | |
| Gate Resistance | Rg | VDS=0V, Scan F mode | -- | 1.4 | -- | |
| SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS | ||||||
| Continuous source current | IS | Integral reverse p-n Junction diode in the MOSFET | -- | -- | 12 | A |
| Pulsed source current | ISM | -- | -- | 48 | A | |
| Diode forward voltage drop. | VSD | IS=12A, VGS=0V | -- | -- | 1.3 | V |
| Reverse recovery time | Trr | IS=12A, VGS=0V, dIF/dt=100A/us | -- | 480 | -- | ns |
| Reverse recovery Charge | Qrr | -- | 4.5 | -- | uC | |
| Peak Reverse Recovery Current | Irrm | IS=12A, dIF/dt=100A/us | -- | 18.5 | -- | A |
Ordering and Marking Information:
| PACKAGE | MARKING | ORDERING DEVICE NO. | MARKING | PACKAGE | PACKING | QUANTITY |
|---|---|---|---|---|---|---|
| TO-220F | 12N65 | ASDM12N65F-T | 12N65 | TO-220F | Tube | 50/Tube |
Package Dimensions: TO-220F
2410121739_ASDsemi-ASDM12N65F-T_C2972883.pdf
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