ASDSemi ASDM60N45KQ R N Channel MOSFET 60V 45A with excellent thermal performance and ESD protection
Key Attributes
Model Number:
ASDM60N45KQ-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+175℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
70pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.92nF@25V
Pd - Power Dissipation:
80W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
ASDM60N45KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM60N45KQ is a 60V N-Channel MOSFET designed for power switching applications, including hard-switched and high-frequency circuits, and Uninterruptible Power Supply (UPS) systems. It features a high-density cell design for ultra-low RDS(on), fully characterized avalanche voltage and current, and excellent package for good heat dissipation. The product also boasts high ESD capability due to special process technology.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: N-Channel MOSFET
- Package Type: TO-252-2L
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Drain Current-Continuous | ID | (TC=25) | 45 | A |
| Drain Current-Continuous | ID (100) | (TC=100) | 35 | A |
| Pulsed Drain Current | IDM | 180 | A | |
| Maximum Power Dissipation | PD | 80 | W | |
| Derating factor | 0.53 | W/ | ||
| Single pulse avalanche energy | EAS | (Note 5) | 115 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | ±100 nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 1.5 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A (Note 3) | - 12 15 | m |
| Forward Transconductance | gFS | VDS=25V,ID=20A | 24 - - | S |
| Diode Forward Voltage | VSD | VGS=0V,IS=40A (Note 3) | - 1.2 | V |
| Diode Forward Current | IS | (Note 2) | - - 45 | A |
| Reverse Recovery Time | trr | - 50 - | nS | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = 40A, di/dt = 100A/s (Note3) | - 100 - | nC |
| Input Capacitance | Clss | (Note 4) | - 1920 - | PF |
| Output Capacitance | Coss | (Note 4) | - 221 - | PF |
| Reverse Transfer Capacitance | Crss | (Note 4) | - 14 17 | m |
| Switching Characteristics: Turn-on Delay Time | td(on) | VDD=30V,ID=2A,RL=15, VGS=10V,RG=2.5 (Note 4) | - 25 - | nS |
| Switching Characteristics: Turn-on Rise Time | tr | VDD=30V,ID=2A,RL=15, VGS=10V,RG=2.5 (Note 4) | - 5 - | nS |
| Switching Characteristics: Turn-Off Delay Time | td(off) | VDD=30V,ID=2A,RL=15, VGS=10V,RG=2.5 (Note 4) | - 50 - | nS |
| Switching Characteristics: Turn-Off Fall Time | tf | VDD=30V,ID=2A,RL=15, VGS=10V,RG=2.5 (Note 4) | - 6 - | nS |
| Total Gate Charge | Qg | VDS=30V,ID=50A, VGS=10V (Note 4) | - 30 | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=50A, VGS=10V (Note 4) | - 5 | nC |
| Gate-Drain Charge | Qgd | VDS=30V,ID=50A, VGS=10V (Note 4) | - 5 | nC |
Ordering and Marking Information
| Device No. | Marking | Package | Quantity | Packing |
|---|---|---|---|---|
| ASDM60N45KQ | 60N45 | TO-252 | 2500/Reel | Tape&Reel |
2410121513_ASDsemi-ASDM60N45KQ-R_C2972869.pdf
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