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quality Switching Low EMI Bestirpower BMW65N190UC1 Super Junction MOSFET for Telecom and Server Equipment factory
quality Switching Low EMI Bestirpower BMW65N190UC1 Super Junction MOSFET for Telecom and Server Equipment factory

Switching Low EMI Bestirpower BMW65N190UC1 Super Junction MOSFET for Telecom and Server Equipment

Key Attributes
Model Number: BMW65N190UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
20A
RDS(on):
190mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
1 N-channel
Output Capacitance(Coss):
78pF
Pd - Power Dissipation:
152W
Input Capacitance(Ciss):
1.69nF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
BMW65N190UC1
Package:
TO-247
Product Description

Product Overview

The BMx65N190UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates significantly higher efficiency through optimized charge coupling technology, offering designers the advantages of Low EMI and reduced switching loss. Its ultra-fast body diode, extremely low losses (low FOM Rdson*Qg and Eoss), and high commutation ruggedness make it suitable for demanding applications such as PC power, AC/DC power supplies, telecom/server equipment, and solar inverters.

Product Attributes

  • Brand: Bestirpower
  • Technology: Super Junction
  • Product Series: BMx65N190UC1

Technical Specifications

Model Top Marking Package Packing Method BVDSS (V) ID, Tc=25C (A) RDS(on),max. Tc=25C (m) Qg,typ (nC)
BMx65N190UC1 BMP65N190UC1 TO220 Tube 650 20 190 40
BMx65N190UC1 BMF65N190UC1 TO220F Tube 650 20 190 40
BMx65N190UC1 BMB65N190UC1 TO263 Tape & Reel 650 20 190 40
BMx65N190UC1 BMW65N190UC1 TO247 Tube 650 20 190 40
Symbol Parameter Test Conditions Value Unit
VDSS Drain to Source Voltage1) 650 V
VGSS Gate to Source Voltage 30 V
ID Drain Current VGS = 10 V, (TC= 25) 20 A
ID Drain Current VGS = 10 V,(TC= 100) 12 A
IDM Drain Current Pulsed 58 A
PD Power Dissipation For TO-220F 152 W
PD Power Dissipation For TO-220, TO-247, TO-263 34 W
EAS Single Pulsed Avalanche Energy3 306 mJ
dv/dt Diode Recovery dv/dt4 50 V/ns
TSTG Storage Temperature Range -55 to 150
TJ Maximum Operating Junction Temperature 150
TL Maximum Lead Temperature for Soldering, 1/8 from Case for 10s 260
IS Continuous diode forward current TC=25C 20 A
IS,pulse Diode pulse current2) 58 A
RJC Thermal Resistance, Junction to Case, max (FullPAK) 0.82 /W
RJA Thermal Resistance, Junction to Ambient, max (FullPAK) 62.5 /W
RJC Thermal Resistance, Junction to Case, max (Non FullPAK) 3.67 /W
RJA Thermal Resistance, Junction to Ambient, max (Non FullPAK) 62.5 /W
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1mA 650 V
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V TJ=25C 10 A
IGSS Gate-Source Leakage Current VGS = 30 V, VDS = 0 V 100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 7A 190 m
Ciss Input Capacitance VGS=0V, VDS=50V, f=250kHz 1690 pF
Coss Output Capacitance 78 pF
Crss Reverse Transfer Capacitance 3.3 pF
Qg Total Gate Charge VGS = 0 to 10V, VDD =400V, ID =7A 40 nC
Qgs Gate to Source Charge 9 nC
Qgd Gate to Drain Miller Charge 17 nC
Vplateau Gate plateau voltage 6 V
RG Gate Resistance f = 1.0MHz open drain 4
td(on) Turn-On Delay Time VDD = 400V, ID = 7A, VGS = 10V 10 ns
tr Turn-On Rise Time 16 ns
td(off) Turn-Off Delay Time 55 ns
tf Turn-Off Fall Time 14 ns
VSD Diode Forward Voltage IF=7A, VGS = 0V TJ=25C 0.85 V
trr Reverse Recovery Time VR = 400V, IF =7A diF/dt = 100A/s 120 ns
Qrr Reverse Recovery Charge 0.6 C
Irrm Peak Reverse Recovery Current 10 A
Co(er) Effective output capacitance, energy related1) VGS=0V, VDS= 0 to 400V 4.0 5.0 pF
Co(tr) Effective output capacitance, time related2) VGS=0V, VDS= 0 to 400V 245 pF

1) limited by Tj max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by Tj,max.
3) VDD=50V, RG=25, Starting Tj=25C.
4) VDClink=400V; VDS,peak
2508251658_Bestirpower-BMW65N190UC1_C42401706.pdf

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