Npn transistor BLUE ROCKET 2N4401 in to92 package designed for medium power switching and amplification applications

Name: Npn transistor BLUE ROCKET 2N4401 in to92 package designed for medium power switching and amplification applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2N4401
Availability: InStock

Key Attributes

Model Number: 2N4401

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

Pd - Power Dissipation:

625mW

Transition Frequency(fT):

250MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

40V

Mfr. Part #:

2N4401

Package:

TO-92

Product Description

Product Overview

The 2N4401 is a silicon NPN transistor in a TO-92 plastic package, designed for medium power amplification and switching applications requiring collector currents up to 500 mA. It offers high current and low voltage capabilities, making it suitable for various electronic circuits.

Product Attributes

Type: NPN Semiconductor Transistor
Package: TO-92 Plastic Package
Marking: N4401 (Product Type), BR (Company Code), **** (Lot No. Code)

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	60	V
Collector to Emitter Voltage	VCEO	40	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current - Continuous	IC	600	mA
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0		60	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA, IB=0		40	V
Emitter to Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0		6.0	V
Collector Cut-Off Current	ICBO	VCB=60V, IE=0		50	nA
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0		50	nA
DC Current Gain	hFE	VCE=1.0V, IC=150mA	100	300
		VCE=2.0V, IC=500mA	40
		VCE=1.0V, IC=10mA	80
		VCE=1.0V, IC=1.0mA	40
Collector to Emitter Saturation Voltage	VCE(sat)	IC=150mA, IB=15mA	0.4		V
Collector to Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=50mA		0.75	V
Base to Emitter Saturation Voltage	VBE(sat)	IC=150mA, IB=15mA	0.75	0.95	V
Base to Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA		1.2	V
Current Gain Bandwidth Product	fT	VCE=10V, IC=20mA, f=100MHz	250		MHz
Delay Time	td	VCC=30V, IC=150mA, IB1=15mA		15	ns
Rise Time	tr			20	ns
Storage Time	ts	VCC=30V, IC=150mA, IB1=-IB2=15mA		225	ns
Fall Time	tf			30	ns

Packaging

Bulk Package

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Bag Dimension (mm)	Inner Box Dimension (mm)	Outer Box Dimension (mm)
TO-92	1,000	10	10,000	5	50,000	135190	237172102	560245195
TO-92	1,000	10	10,000	10	100,000	135190	237172102	560245375

Ammo Package

Package Type	Units/tape	Tape/Inner Box	Rows/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Inner Box Dimension (mm)	Outer Box Dimension (mm)
TO-92	3,000	1	120	10	30,000	32823042	Small Box: 480346235, Large Box: 547407268

Soldering Information

Temperature Profile for Dip Soldering (Pb-Free)

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2555, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temperature: 2705
Time: 101 sec.

2410121234_BLUE-ROCKET-2N4401_C358536.pdf

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