Low On Resistance N Channel Power MOSFET Bestirpower BML60N120UC1 600 Volt 28 Ampere for Telecom and Server Power
Key Attributes
Model Number:
BML60N120UC1
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
23A
RDS(on):
120mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
152W
Input Capacitance(Ciss):
2.38nF@50V
Gate Charge(Qg):
53nC
Mfr. Part #:
BML60N120UC1
Package:
DFN-8(8x8)
Product Description
Product Overview
The BML60N120UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology for exceptionally low on-resistance and gate charge. This device offers significant efficiency gains through optimized charge coupling, resulting in low conduction and switching losses, and a low EMI profile. It is qualified for industrial grade applications according to JEDEC standards, making it ideal for AC/DC power supplies, PC power, telecom/server applications, and solar inverters.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Grade: Industrial Grade (JEDEC qualified)
- Diode: Ultra-fast body diode
Technical Specifications
| Model | BML60N120UC1 | Unit |
|---|---|---|
| Features | Ultra-fast body diode, Extremely low losses (low FOM Rdson*Qg and Eoss), Very high commutation ruggedness | |
| Description | N-Channel Power MOSFET using advanced super junction technology | |
| Voltage Rating | 600 V | |
| Current Rating | 28 A | |
| On-Resistance (RDS(on)) | 120 m | |
| Total Gate Charge (Qg) | 53 nC | |
| Applications | AC/DC power supply, PC power, Telecom/Server, Solar inverter | |
| Absolute Maximum Ratings | ||
| Drain to Source Voltage (VDSS) | 600 | V |
| Gate to Source Voltage (VGSS) | 30 | V |
| Drain Current Continuous (TC = 25) | 23 | A |
| Drain Current Continuous (TC = 125) | 10 | A |
| Drain Current Pulsed (TC = 25) (IDM) | 84 | A |
| Single Pulsed Avalanche Energy (EAS) | 506 | mJ |
| Repetitive Avalanche Energy (IAR) | 4.5 | A |
| MOSFET dv/dt | 50 | V/ns |
| Peak Diode Recovery dv/dt | 50 | V/ns |
| Power Dissipation (Ptot) (TC = 25) | 152 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | |
| Soldering temperature (Tsold) | 260 | |
| Thermal Characteristics | ||
| Thermal Resistance, Junction to Case (RJC) Max. | 0.82 | /W |
| Thermal Resistance, Junction to Ambient (RJA) Max. | 62 | /W |
| Package Marking and Ordering Information | ||
| Part Number | BML60N120UC1 | |
| Top Marking | BML60N120UC1 | |
| Package | DFN8*8 | |
| Packing Method | Tape & Reel | |
| Quantity | 5000 units | |
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||
| Off Characteristics | ||
| Drain-Source Breakdown Voltage (BVDSS) | 600 | V |
| Zero Gate Voltage Drain Current (IDSS) | 10 | A |
| Gate-Source Leakage Current (IGSS) | 100 | nA |
| On Characteristics | ||
| Gate Threshold Voltage (VGS(th)) | 3.0 - 5.0 | V |
| Static Drain to Source On Resistance (RDS(on)) | 100 - 120 | m |
| Dynamic Characteristics | ||
| Input Capacitance (Ciss) | 2380 | pF |
| Output Capacitance (Coss) | 89 | pF |
| Reverse transfer capacitance (Crss) | 4 | pF |
| Energy Related Output Capacitance (Co(er)) | 73 | pF |
| Time Related Output Capacitance (Co(tr)) | 379 | pF |
| Total Gate Charge (Qg(tot)) at 10 V | 53 | nC |
| Gate to Source Charge (Qgs) | 15 | nC |
| Gate to Drain Miller Charge (Qgd) | 18 | nC |
| Gate Resistance (RG) | 4.0 | |
| Switching Characteristics | ||
| Turn-On Delay Time (td(on)) | 15 | ns |
| Turn-On Rise Time (tr) | 24 | ns |
| Turn-Off Delay Time (td(off)) | 72 | ns |
| Turn-Off Fall Time (tf) | 6 | ns |
| Source-Drain Diode Characteristics | ||
| Maximum Continuous Diode Forward Current (IS) | 23 | A |
| Diode Forward Voltage (VSD) | 0.85 | V |
| Reverse Recovery Time (trr) | 160 | ns |
| Reverse Recovery Charge (Qrr) | 1.03 | C |
| Peak reverse recovery current (Imm) | 12 | A |
2504101957_Bestirpower-BML60N120UC1_C46472751.pdf
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