ASDsemi ASDM3401ZA R P Channel MOSFET with Excellent On Resistance and Maximum DC Current Capability
Key Attributes
Model Number:
ASDM3401ZA-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
ASDM3401ZA-R
Package:
SOT-23
Product Description
Product Overview
The Ascend Semiconductor ASDM3401ZA is a P-Channel MOSFET designed for high-density cell applications, offering extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is suitable for PWM applications, load switching, and power management scenarios.
Product Attributes
- Brand: Ascend Semiconductor
- Product Line: P-Channel MOSFET
- Model Series: ASDM3401ZA
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| RDS(on), Max @ VGS = -10 V | RDS(on) | VGS = -10V, ID = -4A | 65 | m |
| Continuous Drain Current | ID | -4.2 | A | |
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | -4.2 | A | |
| Power Dissipation | PD | 350 | mW | |
| Thermal Resistance Junction to Ambient (t<5s) | RJA | 357 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V |
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | A |
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA |
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4A | 65 | m |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3A | 75 | m |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V,ID=-1A | 100 | m |
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 7 | S |
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 to -1.5 | V |
| Dynamic Characteristics (note 2) | ||||
| Input capacitance | Ciss | 954 | pF | |
| Output capacitance | Coss | 115 | pF | |
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 77 | pF |
| Switching Characteristics (note 2) | ||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.3 | ns |
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 3.2 | ns |
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 38.2 | ns |
| Turn-off fall Time | tf | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 12 | ns |
| Drain-source diode characteristics and maximum ratings | ||||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -1 | V |
Ordering and Marking Information
| Device No. | Marking | Package | Packing Quantity |
|---|---|---|---|
| ASDM3401ZA-R | 3401 | SOT23 | 3000/Reel |
2409291808_ASDsemi-ASDM3401ZA-R_C2758233.pdf
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