Super Junction Power MOSFET Bestirpower BMD65N340E2 with Low Switching Losses and High Drain Current
Key Attributes
Model Number:
BMD65N340E2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
340mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF@400V
Number:
1 N-channel
Input Capacitance(Ciss):
801pF@400V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
19nC
Mfr. Part #:
BMD65N340E2
Package:
DPAK
Product Description
Product Overview
The BMD65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This device is designed to deliver significantly higher efficiency through optimized charge coupling technology, offering advantages such as low EMI and reduced switching losses for designers. It is suitable for a range of power electronics applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), and chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Certifications: Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Model | BMD65N340E2 | ||
| Drain to Source Breakdown Voltage (BVDSS) @ TJ,max | 700 | V | |
| Drain Current (ID) @ TC = 25 | 12 | A | VGS=10V, Fig 10 |
| On-Resistance (RDS(on),max) @ TJ = 25 | 340 | m | VGS=10V, ID = 4.8 A, Fig 3 |
| Gate Charge (Qg,typ) | 19 | nC | VDS = 400 V,ID =5.5 A, VGS = 10 V, Fig 6 |
| Drain to Source Voltage (VDSS) | 650 | V | |
| Gate to Source Voltage (VGSS) | 30 | V | |
| Drain Current Pulsed (IDM) | 36 | A | Note 1 |
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | Note 2 |
| Avalanche Current (IAS) | 7 | A | Note 2 |
| MOSFET dv/dt | 50 | V/ns | |
| Peak Diode Recovery dv/dt | 15 | V/ns | Note 3 |
| Power Dissipation (PD) @ TC = 25 | 114 | W | Fig 11 |
| Derate Above 25 | 0.9 | W/ | |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | ||
| Thermal Resistance, Junction to Case (RJC), Max. | 1.1 | /W | |
| Thermal Resistance, Junction to Ambient (RJA), Max. | 62 | /W | |
| Soldering temperature (Tsold), wave soldering only allowed at leads | 260 | ||
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V | VGS = 0 V, ID = 250 uA, Fig 7 |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 650 V, VGS = 0 V |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS = 30 V, VDS = 0 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VGS = VDS, ID = 250 uA, Fig 9 |
| Static Drain to Source On Resistance (RDS(on)) @ TJ = 150 | 790 - 850 | m | VGS = 10 V, ID = 4.8 A, Fig 8 |
| Input Capacitance (Ciss) | 801 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz, Fig 5 |
| Output Capacitance (Coss) | 28 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz, Fig 5 |
| Reverse transfer capacitance (Crss) | 3.8 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz, Fig 5 |
| Total Gate Charge (Qg(tot)) at 10 V | 19 | nC | VDS = 400 V,ID =5.5 A, VGS = 10 V, Fig 6 |
| Gate to Source Charge (Qgs) | 2.9 | nC | VDS = 400 V,ID =5.5 A, VGS = 10 V, Fig 6 |
| Gate to Drain Miller Charge (Qgd) | 9.7 | nC | VDS = 400 V,ID =5.5 A, VGS = 10 V, Fig 6 |
| Gate Resistance (RG) | 5.6 | f = 1 MHz, Open Drain | |
| Turn-On Delay Time (td(on)) | 16 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 , Fig 14 |
| Turn-On Rise Time (tr) | 6 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 , Fig 14 |
| Turn-Off Delay Time (td(off)) | 29 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 , Fig 14 |
| Turn-Off Fall Time (tf) | 22 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 , Fig 14 |
| Maximum Continuous Diode Forward Current (IS) | 12 | A | |
| Maximum Pulsed Diode Forward Current (ISM) | 36 | A | |
| Diode Forward Voltage (VSD) | 0.9 - 1.2 | V | VGS = 0 V, ISD = 11 A, Fig 4 |
| Reverse Recovery Time (trr) | 198 | ns | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s, Fig 15 |
| Reverse Recovery Charge (Qrr) | 1.93 | C | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s, Fig 15 |
| Package Type | DPAK | ||
| Package Marking | BMD65N340E2 | ||
| Packing Method | Tape & Reel | 2500 units |
2506162235_Bestirpower-BMD65N340E2_C49164820.pdf
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