650V 83A Silicon Carbide MOSFET Bestirpower BC25SG65SWS for EV Charging Solar Inverters and Telecom Power
Key Attributes
Model Number:
BC25SG65SWS
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
83.3A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ
Gate Threshold Voltage (Vgs(th)):
2.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.1pF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
2.9nF
Output Capacitance(Coss):
185pF
Gate Charge(Qg):
124nC
Mfr. Part #:
BC25SG65SWS
Package:
SOT-227
Product Description
Product Overview
The BC25SG65SWS is a 650V, 83.3A N-Channel Silicon Carbide Power MOSFET designed for high-performance power electronics applications. It offers high switching speed with low gate charge and a fast intrinsic diode with low reverse recovery, contributing to system efficiency improvement and increased power density. Its robust avalanche capability and 100% avalanche testing ensure reliability. This MOSFET is suitable for applications including solar inverters/ESS/UPS, EV charging stations, server & telecom power, and industrial power supplies. It is halogen-free and RoHS compliant.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 100 uA | 650 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650 V, VGS = 0 V | - | - | 100 | A |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650 V, VGS = 0 V, TJ = 175 | - | - | - | mA |
| Gate-Source Leakage Current (IGSS) | VGS = +20 V, VDS = 0 V | - | - | 200 | nA |
| Gate-Source Leakage Current (IGSS) | VGS = -10 V, VDS = 0 V | - | - | -200 | nA |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID = 10 mA | 1.6 | 2.6 | 3.6 | V |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 20 A | - | 25 | 30 | m |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 20 A, TJ = 175 | - | 45 | - | m |
| Transconductance (gfs) | VDS = 20 V, ID = 20 A | - | 13 | - | S |
| Input Capacitance (Ciss) | VDS = 400 V, VGS = 0V, f = 1 MHz | - | 2900 | - | pF |
| Output Capacitance (Coss) | - | - | 185 | - | pF |
| Reverse Capacitance (Crss) | - | - | 10.1 | - | pF |
| Stored Energy in Output Capacitance (Eoss) | VDS = 0 V to 400 V, VGS = 0 V | - | 230 | - | J |
| Energy Related Output Capacitance (Co(er)) | - | - | 2875 | - | pF |
| Time Related Output Capacitance (Co(tr)) | - | - | 2870 | - | pF |
| Total Gate Charge (Qg(tot)) | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load | - | 124 | - | nC |
| Gate to Source Charge (Qgs) | - | - | 30 | - | nC |
| Gate to Drain Miller Charge (Qgd) | - | - | 20 | - | nC |
| Internal Gate Resistance (RG) | f = 1MHz, VAC=25mV | - | 1.5 | - | |
| Turn-On Delay Time (td(on)) | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 5 , FWD : body diode at VGS=-5V, Inductive load | - | 20 | - | ns |
| Turn-On Rise Time (tr) | - | - | 45 | - | ns |
| Turn-Off Delay Time (td(off)) | - | - | 18 | - | ns |
| Turn-Off Fall Time (tf) | - | - | 10 | - | ns |
| Turn-on Switching Energy (Eon) | - | - | 170 | - | uJ |
| Turn-off Switching Energy (Eoff) | - | - | 90 | - | uJ |
| Total Switching Energy (Etot) | - | - | 260 | - | uJ |
| Maximum Continuous Diode Forward Current (IS) | - | - | - | 83.3 | A |
| Maximum Pulsed Diode Forward Current (ISM) | - | - | - | 350 | A |
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 15 A | - | 3.2 | - | V |
| Reverse Recovery Time (trr) | VDD = 400 V, ISD = 15 A, dIF/dt = 1200 A/s, Includes QOSS | - | 32 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 123 | - | nC |
| Peak Reverse Recovery Current (Irrm) | - | - | 10 | - | A |
| Drain to Source Voltage (VDSS) | TJ = 25 | - | 650 | - | V |
| Gate to Source Voltage (VGS) (DC) | - | -13 | - | +22 | V |
| Recommended Operation Value (VGSop) | - | -5 | - | +18 | V |
| Drain Current (ID) | VGS = 18 V (TC = 25) | - | 83.3 | - | A |
| Drain Current (ID) | VGS = 18 V (TC = 100) | - | 58.9 | - | A |
| Drain Current Pulsed (IDM) | (Note1) | - | 350 | - | A |
| Power Dissipation (PD) | (TC = 25) | - | 375 | - | W |
| Derate Above 25 | - | - | 2.5 | - | W/ |
| Operating and Storage Temperature Range (TJ, TSTG) | - | -55 | - | 175 | |
| Thermal Resistance, Junction to Case, Max. (RJC) | - | - | 0.40 | - | /W |
| Thermal Resistance, Junction to Ambient, Max. (RJA) | - | - | 27.55 | - | /W |
| Soldering temperature, wave soldering only allowed at leads (Tsold) | - | - | - | 260 |
Note 1: Limited by maximum junction temperature.
Part Number: BC25SG65SWS
Top Marking: BC25SG65SWS
Package: SOT-227
Packing Method: Tube
Quantity: 10 units
2512111635_Bestirpower-BC25SG65SWS_C53152698.pdf
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