Power MOSFET Bestirpower BMW65N065UC1 with Super Junction Technology and High Commutation Ruggedness
Key Attributes
Model Number:
BMW65N065UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
55A
RDS(on):
65mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@1000uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
3.99nF@100V
Pd - Power Dissipation:
500W
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
BMW65N065UC1
Package:
TO247-3
Product Description
Product Overview
The Bestirpower BMx65N065UC1 is a Super Junction Power MOSFET featuring advanced super junction technology for exceptionally low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling and offers designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and high commutation ruggedness make it suitable for demanding applications.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Product Line: BMx65N065UC1
Technical Specifications
| Model | Part Number | Top Marking | Package | Packing Method |
|---|---|---|---|---|
| BMx65N065UC1 | BMP65N065UC1 | BMx65N065UC1 650V 65m Power MOSFET | TO-220 | Tube |
| BMx65N065UC1 | BMF65N065UC1 | BMx65N065UC1 650V 65m Power MOSFET | TO-220F | Tube |
| BMx65N065UC1 | BMB65N065UC1 | BMx65N065UC1 650V 65m Power MOSFET | TO-263 | Tape & Reel |
| BMx65N065UC1 | BMW65N065UC1 | BMx65N065UC1 650V 65m Power MOSFET | TO-247 | Tube |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1mA | 650 | - | - | V |
| ID | Drain Current | VGS = 10 V, (TC= 25) | - | - | 55 | A |
| ID | Drain Current | VGS = 10 V, (TC= 100) | - | - | 35 | A |
| IDM | Drain Current Pulsed | - | - | - | 165 | A |
| PD | Power Dissipation For TO-220F | - | - | - | 500 | W |
| PD | Power Dissipation For TO-220, TO-247, TO-263 | - | - | - | 34 | W |
| EAS | Single Pulsed Avalanche Energy | VDD=50V, RG=25, Starting Tj=25C | - | - | 1000 | mJ |
| dv/dt | Diode Recovery dv/dt | VDClink=400V; VDS,peak| - | 50 | - | V/ns | |
| TSTG | Storage Temperature Range | - | -55 | - | 150 | |
| TJ | Maximum Operating Junction Temperature | - | - | - | 150 | |
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10s | - | - | - | 260 | |
| IS | Continuous diode forward current TC=25C | - | - | - | 55 | A |
| IS,pulse | Diode pulse current | - | - | - | 165 | A |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, max (FullPAK) | - | - | 0.25 | - | /W |
| RJA | Thermal Resistance, Junction to Ambient, max (FullPAK) | - | - | 62 | - | /W |
| RJC | Thermal Resistance, Junction to Case, max (Non FullPAK) | - | - | 3.67 | - | /W |
| RJA | Thermal Resistance, Junction to Ambient, max (Non FullPAK) | - | - | 62.5 | - | /W |
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1mA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V TJ=25C | - | - | 10 | A |
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 1mA | 2.8 | - | - | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23.5A TJ=25C | - | 58 | 65 | m |
| Ciss | Input Capacitance | VGS=0V, VDS=100V, f=250kHz | - | 3990 | - | pF |
| Coss | Output Capacitance | - | - | 120 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 5 | - | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDD =400V, ID =25A | - | 73 | - | nC |
| Qgs | Gate to Source Charge | - | - | 18 | - | nC |
| Qgd | Gate to Drain Miller Charge | - | - | 23 | - | nC |
| Vplateau | Gate plateau voltage | - | - | 4.5 | - | V |
| RG | Gate Resistance | VDD = 0V, VGS= 0V, f = 1.0MHz | - | 3.5 | - | |
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 23A, VGS = 10V | - | 66 | - | ns |
| tr | Turn-On Rise Time | - | - | 79 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 139 | - | ns |
| tf | Turn-Off Fall Time | - | - | 12 | - | ns |
| VSD | Diode Forward Voltage | IF=23A, VGS = 0V TJ=25C | - | 0.9 | - | V |
| trr | Reverse Recovery Time | VR = 400V, IF =23A diF/dt = 100A/s | - | 165 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 1.9 | - | C |
| Irrm | Peak Reverse Recovery Current | - | - | 22 | - | A |
| Co(er) | Effective output capacitance, energy related | VDS= 0 to 400V | - | 125 | - | pF |
| Co(tr) | Effective output capacitance, time related | VDS= 0 to 400V | - | 637 | - | pF |
Applications
- PC power
- AC/DC power supply
- Telecom/Server
- Solar Inverter
- Super charger for automobiles
Features
- Ultra-fast body diode.
- Extremely low losses due to very low FOM Rdson*Qg and Eoss.
- Very high commutation ruggedness.
- Low EMI.
- Low switching loss.
2508071805_Bestirpower-BMW65N065UC1_C50153973.pdf
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