P Channel MOSFET BL BLM3401 Featuring Low RDS ON and Lead Free Package for Power Switching Solutions
Key Attributes
Model Number:
BLM3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
55mΩ@10V,4.2A
Gate Threshold Voltage (Vgs(th)):
1.3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
950pF
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
BLM3401
Package:
SOT-23
Product Description
Product Overview
The Belling BLM3401 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM). Key features include a VDS of -30V, ID of -4.2A, and high power and current handling capabilities. It is a lead-free product.
Product Attributes
- Brand: Belling
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Technology: Advanced Trench Technology
- Certifications: Pb Free Product
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| General Features | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Continuous Drain Current | ID | -4.2 | A | |
| RDS(ON) | VGS=-2.5V | < 120 | m | |
| RDS(ON) | VGS=-4.5V | < 72 | m | |
| RDS(ON) | VGS=-10V | < 55 | m | |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous | ID | -4.2 | A | |
| Drain Current-Pulsed (Note 1) | IDM | -30 | A | |
| Maximum Power Dissipation | PD | 1.2 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ||
| Thermal Characteristic | ||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 104 | /W | |
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA |
| On Characteristics (Note 3) | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.7 To -1.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4.2A | 50 To 55 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 64 To 72 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-1A | 95 To 120 | m |
| Forward Transconductance | gFS | VDS=-5V, ID=-4.2A | 10 | S |
| Dynamic Characteristics (Note 4) | ||||
| Input Capacitance | Clss | VDS=-15V, VGS=0V, F=1.0MHz | 950 | PF |
| Output Capacitance | Coss | 115 | PF | |
| Reverse Transfer Capacitance | Crss | 75 | PF | |
| Switching Characteristics (Note 4) | ||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-3.2A, VGS=-10V, RGEN=6 | 7 | nS |
| Turn-on Rise Time | tr | 3 | nS | |
| Turn-Off Delay Time | td(off) | 30 | nS | |
| Turn-Off Fall Time | tf | 12 | nS | |
| Total Gate Charge | Qg | VDS=-15V, ID=-4A, VGS=-4.5V | 9.5 | nC |
| Gate-Source Charge | Qgs | 2 | nC | |
| Gate-Drain Charge | Qg | 3 | nC | |
| Drain-Source Diode Characteristics | ||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V, IS=-1A | -1.2 | V |
| Package Information | ||||
| Package Type | SOT-23 | |||
| Reel Size | 180mm | |||
| Tape Width | 8 mm | |||
| Quantity per Reel | 3000 units | |||
| SOT-23 Package Dimensions (UNIT:mm) | ||||
| Symbol | MIN. | MAX. | ||
| A | 0.900 | 1.150 | ||
| A1 | 0.000 | 0.100 | ||
| A2 | 0.900 | 1.050 | ||
| b | 0.300 | 0.500 | ||
| c | 0.080 | 0.150 | ||
| D | 2.800 | 3.000 | ||
| E | 1.200 | 1.400 | ||
| E1 | 2.250 | 2.550 | ||
| e | 0.950 TYP | |||
| e1 | 1.800 | 2.000 | ||
| L | 0.550 REF | |||
| L1 | 0.300 | 0.500 | ||
| 0 | 8 | |||
2412052036_BL-BLM3401_C90479.pdf
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