The BL6N120 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is suitable for Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
| Parameter | Value | Unit | Notes |
| Drain-to-Source Voltage (VDS@Tj.max) | 1300 | V | at Tj.max |
| Continuous Drain Current (ID) | 6 | A | |
| On-Resistance (RDS(ON).Typ) | 2.3 | | Typ. |
| Drain-to-Source Voltage (VDSS) | 1200 | V | |
| Continuous Drain Current (ID) at TC = 25C | 6 | A | |
| Continuous Drain Current (ID) at TC = 100C | 3.5 | A | |
| Pulsed Drain Current (IDM) | 24 | A | Note 1 |
| Gate-to-Source Voltage (VGS) | 30 | V | |
| Single Pulse Avalanche Energy (EAS) | 480 | mJ | Note 2 |
| Peak Diode Recovery dv/dt | 5.0 | V/ns | Note 3 |
| Power Dissipation (PD) for TO-220, TO-3PN, TO-247 | 200 | W | |
| Derating Factor above 25C (for TO-220, TO-3PN, TO-247) | 1.6 | W/ | |
| Power Dissipation (PD) for TO-220F, TO-3PF | 63 | W | |
| Derating Factor above 25C (for TO-220F, TO-3PF) | 0.5 | W/ | |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 150 | | |
| Maximum Temperature for Soldering (TL) | 300 | | |
| Junction-to-Case Thermal Resistance (RJC) for TO-220/TO-3PN | 0.63 | /W | (No FullPAK) |
| Junction-to-Ambient Thermal Resistance (RJA) for TO-220/TO-3PN | 62.5 | /W | (No FullPAK) |
| Junction-to-Case Thermal Resistance (RJC) for TO-220F/TO-3PF | 2 | /W | (FullPAK) |
| Junction-to-Ambient Thermal Resistance (RJA) for TO-220F/TO-3PF | 62.5 | /W | (FullPAK) |
| Drain to Source Breakdown Voltage (VDS) | 1200 | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current (IDSS) at Tj = 25 | 10 | A | VDS =1200V, VGS= 0V |
| Drain to Source Leakage Current (IDSS) at Tj = 125 | 500 | A | VDS =960V, VGS= 0V |
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS =+30V |
| Gate to Source Reverse Leakage (IGSS(R)) | 100 | nA | VGS =-30V |
| Drain-to-Source On-Resistance (RDS(ON)) | 2.3 - 2.9 | | VGS=10V, ID=3A (Note 4) |
| Gate Threshold Voltage (VGS(TH)) | 3.0 - 5.0 | V | VDS = VGS, ID = 250A (Note 4) |
| Gate Resistance (Rg) | 2.1 | | f = 1.0MHz |
| Input Capacitance (Ciss) | 1960 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Output Capacitance (Coss) | 122 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Reverse Transfer Capacitance (Crss) | 4.2 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Turn-on Delay Time (td(ON)) | 21 | ns | ID =6A, VDD =500V, VGS = 10V, RG =5 |
| Rise Time (tr) | 19 | ns | ID =6A, VDD =500V, VGS = 10V, RG =5 |
| Turn-Off Delay Time (td(OFF)) | 29 | ns | ID =6A, VDD =500V, VGS = 10V, RG =5 |
| Fall Time (tf) | 36 | ns | ID =6A, VDD =500V, VGS = 10V, RG =5 |
| Total Gate Charge (Qg) | 38 | nC | ID =6A, VDD =960V, VGS = 10V |
| Gate to Source Charge (Qgs) | 12 | nC | ID =6A, VDD =960V, VGS = 10V |
| Gate to Drain (Miller)Charge (Qgd) | 13 | nC | ID =6A, VDD =960V, VGS = 10V |
| Continuous Source Current (Body Diode) (IS) | 6 | A | TC=25 C |
| Maximum Pulsed Current (Body Diode) (ISM) | 24 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | IS=6A, VGS=0V (Note 4) |
| Reverse Recovery Time (Trr) | 506 | ns | IS=6A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Charge (Qrr) | 3322 | nC | IS=6A, Tj = 25C, dIF/dt=100A/us, VGS=0V |