NPN Silicon Transistor BLUE ROCKET S8050M-D HY3D SOT-23 Package Suitable for Amplifier Applications

Name: NPN Silicon Transistor BLUE ROCKET S8050M-D HY3D SOT-23 Package Suitable for Amplifier Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: S8050M-D HY3D
Availability: InStock

Key Attributes

Model Number: S8050M-D HY3D

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

450mW

Transition Frequency(fT):

190MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

800mA

Collector - Emitter Voltage VCEO:

25V

Operating Temperature:

Mfr. Part #:

S8050M-D HY3D

Package:

SOT-23

Product Description

Product Overview

The S8050M is a Silicon NPN transistor designed for power amplifier applications. It is packaged in a SOT-23 plastic package and is complementary to the S8550M transistor. This device is suitable for various power amplification circuits.

Product Attributes

Package Type: SOT-23
Semiconductor Type: NPN Silicon Transistor
Complementary Pair: S8550M
Marking Codes: HY3B, HY3C, HY3D

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	800	mA
Base Current	IB	200	mA
Collector Power Dissipation	PC	450	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0			40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=2.0mA, IB=0			25	V
Emitter to Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=35V, IE=0			0.1	A
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0			0.1	A
DC Current Gain	hFE	VCE=1.0V, IC=100mA	85		300
		VCE=1.0V, IC=500mA	40
		VCE=1.0V, IC=5.0mA	45
Collector-Emitter Saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.28	0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA		0.98	1.2	V
Base-Emitter Voltage	VBE	VCE=1.0V, IC=10mA		0.66	1.0	V
Transition Frequency	fT	VCE=10V, IC=50mA	100		190	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			9.0	pF

hFE Classifications & Marking

hFE Classifications	hFE Range	Marking
B	85160	HY3B
C	120200	HY3C
D	160300	HY3D

Marking Instructions

H: Company Code
Y3: Product Type Code
B: hFE Classifications Symbol Code

Temperature Profile for IR Reflow Soldering (Pb-Free)

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temp.: 2605
Time: 101 sec.

Packaging SPEC.

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm)
SOT-23	3,000	10	30,000	6	180,000	78, 180120180, 390385205

2410121238_BLUE-ROCKET-S8050M-D-HY3D_C305482.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.