TO92LM Silicon NPN Transistor BLUE ROCKET 2SC2655 for Power Amplification and Switching Applications
Key Attributes
Model Number:
2SC2655
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
900mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC2655
Package:
TO-92LM
Product Description
Product Overview
The 2SC2655 is a silicon NPN transistor designed for power amplification and switching applications. It features low saturation voltage and high-speed switching, making it a complementary component to the 2SA1020. This transistor is housed in a TO-92LM plastic package.
Product Attributes
- Brand: FS (implied by datasheet URL)
- Package Type: TO-92LM Plastic Package
- Transistor Type: NPN Silicon
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | 50 | V |
| Collector to Emitter Voltage | VCEO | 50 | V |
| Emitter to Base Voltage | VEBO | 5.0 | V |
| Collector Current (DC) | IC | 2.0 | A |
| Collector Power Dissipation | PC | 900 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector to Emitter Breakdown Voltage | VCEO | IC=10mA, IB=0 | 50 | V | ||
| Collector Cut-Off Current | ICBO | VCB=50V, IE=0 | 1.0 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=5.0V, IC=0 | 1.0 | A | ||
| DC Current Gain | hFE(1) | VCE=2.0V, IC=0.5A | 70 | 400 | ||
| DC Current Gain | hFE(2) | VCE=2.0V, IC=1.5A | 40 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=1.0A, IB=0.05A | 0.5 | V | ||
| Base to Emitter Saturation Voltage | VBE(sat) | IC=1.0A, IB=0.05A | 1.2 | V | ||
| Transition Frequency | fT | VCE=2.0V, IC=0.5A | 50 | 100 | MHz | |
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1.0MHz | 30 | 45 | pF | |
| Turn-On Time | ton | (as shown in figure) | 0.1 | s | ||
| Turn-Off Time | tf | 0.1 | s | |||
| Storage Time | tstg | 1.0 | s |
hFE Classifications
| Symbol | hFE Range |
|---|---|
| O | 70140 |
| Y | 120240 |
| G | 200-400 |
Pin Configuration
| Pin 1 | Pin 2 | Pin 3 |
|---|---|---|
| Base | Collector | Emitter |
Marking Instructions
BR: Company Code.
C2655: Product Type.
Y: hFE Classifications Symbol.
****: Lot No. Code (changes with Lot No.).
Resistance to Soldering Heat Test Conditions
| Parameter | Condition |
|---|---|
| Temperature | 2705 |
| Time | 101 sec |
Packaging Specifications (BULK)
| Package Type | Units/Bag | Bags/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Bag Dimensions (unit: mm3) | Inner Box Dimensions (unit: mm3) | Outer Box Dimensions (unit: mm3) |
|---|---|---|---|---|---|---|---|---|
| TO-92LM | 1,000 | 8 | 8,000 | 5 | 40,000 | 135190 | 237172102 | 560245195 |
Packaging Specifications (AMMO)
| Package Type | Units/tape | Tape/Inner Box | Rows/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Tape Dimensions (unit: mm3) | Inner Box Dimensions (unit: mm3) | Outer Box Dimensions (unit: mm3) |
|---|---|---|---|---|---|---|---|---|
| TO-92LM | 2,500 | 1 | 100 | 10 | 25,000 | 32823042 | 547407268 |
2410121234_BLUE-ROCKET-2SC2655_C328596.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
