SOT-23 Package Silicon PNP Transistor BLUE ROCKET 2SA812-G for Audio Frequency Amplifier Applications
Key Attributes
Model Number:
2SA812-G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
180MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA812-G
Package:
SOT-23
Product Description
Product Overview
The 2SA812 is a Silicon PNP transistor designed for audio frequency amplifier applications. It is a complementary pair to the 2SC1623 and comes in a SOT-23 plastic package. The device offers various hFE classifications for different gain ranges.
Product Attributes
- Package Type: SOT-23
- Transistor Type: PNP Silicon
- Complementary Pair: 2SC1623
- Application: Audio frequency amplifier
- Marking Codes: HM4, HM5, M6H, HM7 (based on hFE Classifications)
- Company Code (Marking): H
- Product Type Code (Marking): M4
Technical Specifications
Pin Configuration
- PIN 1: Base
- PIN 2: Emitter
- PIN 3: Collector
hFE Classifications & Marking
| hFE Class | hFE Range | Marking |
|---|---|---|
| O | 90180 | HM4 |
| Y | 135270 | HM5 |
| G | 200400 | M6H |
| L | 300600 | HM7 |
Absolute Maximum Ratings (Ta=25)
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | -60 | V |
| Collector to Emitter Voltage | VCEO | -50 | V |
| Emitter to Base Voltage | VEBO | -5.0 | V |
| Collector Current | IC | -100 | mA |
| Collector Power Dissipation | PC | 200 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
Electrical Characteristics (Ta=25)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector Cut-Off Current | ICBO | VCB=-60V, IE=0 | -0.1 | A | ||
| Emitter Base Cut-Off Current | IEBO | VEB=-5.0V, IC=0 | -0.1 | A | ||
| DC Current Gain | hFE | VCE=-6.0V, IC=-1.0mA | 90 | 200 | 600 | |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-100mA, IB=-10mA | -0.18 | -0.3 | V | |
| Base to Emitter Voltage | VBE | VCE=-6.0V, IC=-1.0mA | -0.58 | -0.62 | -0.68 | V |
| Transition Frequency | fT | VCE=-6.0V, IC=-10mA | 180 | MHz | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1.0MHz | 4.5 | pF |
Resistance to Soldering Heat Test Conditions
| Temperature | Time |
|---|---|
| 2605 | 101 sec |
Packaging Specification
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimensions (mm) |
|---|---|---|---|---|---|---|
| SOT-23 | 3,000 | 10 | 30,000 | 6 | 180,000 | 78 (Reel), 180120180 (Inner Box), 390385205 (Outer Box) |
2409271403_BLUE-ROCKET-2SA812-G_C358490.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
