General Purpose Surface Mount Schottky Barrier Rectifier BLUE ROCKET SS24BF Featuring Loss Technology
Key Attributes
Model Number:
SS24BF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
500uA@40V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@2A
Current - Rectified:
2A
Mfr. Part #:
SS24BF
Package:
SMBF
Product Description
Product Overview
The SS22BF~SS220BF series are surface mount Schottky barrier rectifiers designed for general purpose applications. These diodes offer low power loss, high efficiency, and high forward surge current capability. They are ideal for low voltage, high frequency inverters, and polarity protection applications. The series is available in the SMBF package and is a halogen-free product.
Product Attributes
- Product Type: Surface Mount Schottky Barrier Rectifier
- Package: SMBF
- Certifications: Halogen Free
- General Purpose
Technical Specifications
| Parameter | Symbol | SS22BF | SS24BF | SS26BF | SS28BF | SS210BF | SS212BF | SS215BF | SS220BF | Unit |
|---|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 20 | 40 | 60 | 80 | 100 | 120 | 150 | 200 | V |
| Maximum RMS voltage | VRMS | 14 | 28 | 42 | 56 | 70 | 84 | 105 | 140 | V |
| Maximum DC Blocking Voltage | VDC | 20 | 40 | 60 | 80 | 100 | 120 | 150 | 200 | V |
| Maximum Average Forward Rectified Current | IF(AV) | 2.0 | A | |||||||
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) | IFSM | 50 | A | |||||||
| Typical Junction Capacitance 1) | Cj | 220 | 110 | pF | ||||||
| Typical Thermal Resistance 2) | RJA | 75 | /W | |||||||
| Operating Junction Temperature Range | Tj | -55~+125 | ||||||||
| Storage Temperature Range | Tstg | -55~+150 | ||||||||
| Electrical Characteristics (Ta=25) | ||||||||||
| Max Instantaneous Forward Voltage | VF | IF=2.0A | 0.55 | 0.70 | 0.85 | 0.95 | V | |||
| Maximum DC Reverse Current at Rated DC Reverse Voltage | IR | Ta=25 | 0.5 | mA | ||||||
| Maximum DC Reverse Current at Rated DC Reverse Voltage | IR | Ta=100 | 3.0 | mA | ||||||
Notes:
1) Measured at 1MHz and applied reverse voltage of 4 V D.C.
2) P.C.B. mounted with 2.0 X 2.0" (5 X 5 cm) copper pad areas.
Packaging
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (unit: mm 3) |
|---|---|---|---|---|---|---|
| SMBF | 5000 | 2 | 10000 | 5 | 50000 | 336X332X40 (Inner Box), 380X335X366 (Outer Box) |
Soldering Profile
Temperature Profile for IR Reflow Soldering (Pb-Free):
1. Preheating: 150~180, Time: 60~90 sec.
2. Peak Temp.: 2455, Duration: 50.5 sec.
3. Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions:
Temperature: 2605, Time: 101 sec.
Marking Instructions
The marking code consists of:
- S22B: Product Type Code
- ****: Lot No. Code (The 1st * means: YM Code, The last 3 * means: little Lot No Code)
2410121236_BLUE-ROCKET-SS24BF_C2900707.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
