Power MOSFET BLUE ROCKET BRCS030N03ZC N Channel Type with Low RDS ON and Fast Switching Capability

Name: Power MOSFET BLUE ROCKET BRCS030N03ZC N Channel Type with Low RDS ON and Fast Switching Capability
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS030N03ZC
Availability: InStock

Key Attributes

Model Number: BRCS030N03ZC

Product Custom Attributes

Drain To Source Voltage:

30V

Current - Continuous Drain(Id):

56A

RDS(on):

3.1mΩ@10V

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

260pF

Number:

1 N-channel

Input Capacitance(Ciss):

3.03nF

Output Capacitance(Coss):

355pF

Pd - Power Dissipation:

33W

Gate Charge(Qg):

63nC@10V;29nC@4.5V

Mfr. Part #:

BRCS030N03ZC

Package:

PDFN-8(5x6)

Product Description

Product Overview

The BRCS030N03ZC is an N-Channel MOSFET housed in a PDFN56 plastic package. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This HF product is designed for applications such as battery management, high-frequency point-of-load synchronous Buck converters for MB/NB/UMPC/VGA, networking DC-DC power systems, and load switches.

Product Attributes

Brand: FS (implied by datasheet URL)
Product Type: N-Channel MOSFET
Package Type: PDFN56
Product Features: Low RDS(ON), Low Gate Charge, Low Thermal Resistance, HF Product, Halogen-free
Marking Code: BR 030N03 **** (BR: Company Code, 030N03: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS				30	V
Continuous Drain Current	ID				56	A
Pulsed Drain Current	IDM				168	A
Gate-Source Voltage	VGS				±20	V
Power Dissipation	PD(Tc=25)				33	W
Avalanche energy (L=0.5mH)	EAS				72	mJ
Avalanche Current (L=0.5mH)	IAS				36	A
Junction and Storage Temperature Range	Tj, Tstg		-55		150
Maximum Junction-to-Ambient Steady-State (t ≤ 10s)	RθJA				30	/ W
Maximum Junction-to-Case Steady-State	RθJC				3.8	/ W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	ID=250uA, VGS=0V	30	31		V
Zero Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0V			1.0	uA
Gate-Body leakage current	IGSS	VDS=0V, VGS=±20V			±100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250uA	1	1.8	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V, ID=20A		2.9	3.1	mΩ
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V, ID=10A		4.1	4.8	mΩ
Diode Forward Voltage	VSD	IS=1A, VGS=0V		0.68	1	V
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1.0MHz		3030		pF
Output Capacitance	Coss	VGS=0V, VDS=0V, f=1MHz		355		pF
Reverse Transfer Capacitance	Crss	VGS=0V, VDS=0V, f=1MHz		260		pF
Gate resistance	Rg	VGS=0V, VDS=0V, f=1MHz		3		Ω
Total Gate Charge	Qg(10V)	VGS=10V, VDS=15V, ID=20A		63		nC
Total Gate Charge	Qg(4.5V)	VGS=4.5V, VDS=15V, ID=10A		29		nC
Gate Source Charge	Qgs	VGS=4.5V, VDS=15V, ID=10A		9.0		nC
Gate Drain Charge	Qgd	VGS=4.5V, VDS=15V, ID=10A		9.5		nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time	td(on)	VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω		9		ns
Turn-On Rise Time	tr	VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω		6		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω		52		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω		11.5		ns

Package Information

Package Type	Dimension	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box
PDFN5×6	13”×12”	5000	2	10000	6	60000

Soldering Information

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 150~180, Time: 60~90 sec
Peak Temp.: 245±5, Duration: 5±0.5 sec
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

Temperature: 260±5
Time: 10±1 sec

2410121228_BLUE-ROCKET-BRCS030N03ZC_C22356965.pdf

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