Switching and oscillation circuit transistor BLUE ROCKET MJE13003DI1-G Silicon NPN with TO-92 package

Key Attributes
Model Number: MJE13003DI1-G
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
1W
DC Current Gain:
40
Transition Frequency(fT):
5MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
500V
Mfr. Part #:
MJE13003DI1-G
Package:
TO-92-3
Product Description

Product Overview

The MJE13003DI1G is a high-voltage capable and high-speed switching Silicon NPN transistor designed for TO-92 plastic package applications. This halogen-free product is ideal for energy-saving lamps, electronic ballasts for fluorescent lamps, and other switching and oscillation circuits, including high-frequency electronic lighting ballasts, converters, inverters, and switching regulators.

Product Attributes

  • Brand: Not explicitly stated, but associated with 'fsbrec.com'
  • Product Type: Silicon NPN Transistor
  • Package Type: TO-92 Plastic Package
  • Halogen Free: Yes
  • Marking Code: BR G **** 13003D I1 (BR: Company Code, G: HF Product Code, 13003D: Product Type, I1: Specification Code, ****: Lot No. Code)

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 800 V
Collector to Emitter Voltage VCEO 500 V
Emitter to Base Voltage VEBO 9.0 V
Collector Current - Continuous IC 1.5 A
Collector Power Dissipation PC 1.0 W
Junction Temperature Tj 150
Storage Temperature Range Tsag -55150

Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Base Breakdown Voltage VCBO IC=100A, IE=0 800 V
Collector to Emitter Breakdown Voltage VCEO IC=1mA, IB=0 500 V
Emitter to Base Breakdown Voltage VEBO IE=1mA, IC=0 9.0 V
Collector Cut-Off Current ICBO VCB=800V, IE=0 0.1 mA
Collector cut-off current ICEO VCE=500V, IB=0 0.1 mA
Emitter Base Cut-Off Current IEBO VEB=9.0V, IC=0 0.1 mA
DC Current Gain hFE VCE=5.0V, IC=200mA 30 40
Collector to Emitter Saturation Voltage VCE(sat) IC=1A, IB=250mA 0.8 V
Base to Emitter Saturation Voltage VBE(sat) IC=1A, IB=250mA 1.2 V
Transition Frequency fT VCE=10V, IC=100mA, f=1.0MHz 5.0 MHz
Fall time tf VCE=5V, IC=250mA (UI9600) 0.6 s
Storage time tS 3.5 s

Pin Configuration

  • PIN 1: Base
  • PIN 2: Collector
  • PIN 3: Emitter

Package Dimensions

TO-92

Packaging Specifications

Bulk Package:

Package Type Units Package Quantity Dimension Units/Bag Bags/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box
TO-92 1,000 135190 10 10,000 5 50,000
TO-92 1,000 135190 10 10,000 10 100,000

Ammo Package:

Package Type Units Package Quantity Dimension Units/tape Tape/Inner Box Rows/Inner Box Inner Boxes/Outer Box Units/Outer Box
TO-92 3,000 32823042 1 120 10 30,000

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2705
  • Time: 101 sec.

Temperature Profile for Dip Soldering (Pb-Free):

  • Preheating: 25~150, Time: 60~90sec.
  • Peak Temp.: 2555, Duration: 50.5sec.
  • Cooling Speed: 2~10/sec.

2509180925_BLUE-ROCKET-MJE13003DI1-G_C358542.pdf

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