Silicon NPN Transistor BLUE ROCKET 8050T-D Power Amplifier Component in SOT-89 Plastic Package
Key Attributes
Model Number:
8050T-D
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
190MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
8050T-D
Package:
SOT-89
Product Description
Product Overview
The 8050T is a Silicon NPN transistor housed in a SOT-89 plastic package. It serves as a complementary pair to the 8550T and is designed for power amplifier applications. This transistor offers key electrical characteristics suitable for various amplification circuits.
Product Attributes
- Brand: fsbrec
- Package Type: SOT-89 Plastic Package
- Transistor Type: NPN Silicon
- Complementary Pair: 8550T
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||
| Collector to Base Voltage | VCBO | 40 | V | |
| Collector to Emitter Voltage | VCEO | 25 | V | |
| Emitter to Base Voltage | VEBO | 6.0 | V | |
| Collector Current - Continuous | IC | 1.5 | A | |
| Collector Base - Continuous | IB | 0.5 | A | |
| Collector Power Dissipation | PC | 625 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55150 | ||
| Electrical Characteristics (Ta=25) | ||||
| Collector to Base Breakdown Voltage | VCBO | 40 | V | IC=0.1mA, IE=0 |
| Collector to Emitter Breakdown Voltage | VCEO | 25 | V | IC=2.0mA, IB=0 |
| Emitter to Base Breakdown Voltage | VEBO | 6.0 | V | IE=0.1mA, IC=0 |
| Collector Cut-Off Current | ICBO | 0.1 | A | VCB=35V, IE=0 |
| Emitter Base Cut-Off Current | IEBO | 0.1 | A | VEB=6.0V, IC=0 |
| DC Current Gain (hFE(1)) | hFE(1) | 85300 | VCE=1.0V, IC=100mA | |
| DC Current Gain (hFE(2)) | hFE(2) | 40 | VCE=1.0V, IC=800mA | |
| DC Current Gain (hFE(3)) | hFE(3) | 45 | VCE=1.0V, IC=5.0mA | |
| Collector to Emitter Saturation Voltage | VCE(sat) | 0.280.5 | V | IC=800mA, IB=80mA |
| Emitter to Base Saturation Voltage | VBE(sat) | 0.981.2 | V | IC=800mA, IB=80mA |
| Emitter to Base Voltage | VBE | 0.661.0 | V | VCE=1.0V, IC=10mA |
| Transition Frequency | fT | 100190 | MHz | VCE=10V, IC=50mA |
| Collector Output Capacitance | Cob | 9.0 | pF | VCB=10V, IE=0, f=1.0MHz |
Packaging
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Reel Dimension | Inner Box Dimension | Outer Box Dimension |
|---|---|---|---|---|---|---|---|---|
| SOT-89 | 1,000 | 7 | 7,000 | 8 | 56,000 | 712 | 180120180 | 385257392 |
Soldering Profile
Temperature Profile for IR Reflow Soldering (Pb-Free):
- Preheating: 25~150, Time: 60~90 sec.
- Peak Temp.: 2455, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions:
- Temperature: 2605
- Time: 101 sec.
2410121236_BLUE-ROCKET-8050T-D_C305453.pdf
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