N Channel MOSFET BLUE ROCKET BRCS045N10SHRA with Ultra Low On Resistance and Fast Switching Speeds
Key Attributes
Model Number:
BRCS045N10SHRA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
150A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
124pF
Input Capacitance(Ciss):
6.95nF
Output Capacitance(Coss):
996pF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
BRCS045N10SHRA
Package:
TO-220
Product Description
Product Overview
The BRCS045N10SHRA is an N-channel MOSFET housed in a TO-220 plastic package. It features ultra-low on-resistance and fast switching speeds, making it ideal for high-frequency switching and synchronous rectification applications. This MOSFET is also suitable for use in Battery Management Systems (BMS) and motor control applications.
Product Attributes
- Brand: FSB (implied from URL http://www.fsbrec.com)
- Package Type: TO-220 Plastic Package
- Channel Type: N-Channel
- Marking Code: BR, 045N10SH, Lot No. Code
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Drain Current (Tc=25) | ID(Tc=25) | 150 | A | |||
| Pulsed Drain Current | IDM | 319 | A | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Single Pulsed Avalanche Energy (L=0.5mH) | EAS | 381 | mJ | |||
| Avalanche Current | IAS | 33 | A | |||
| Total Power Dissipation (Tc=25) | PD(Tc=25) | 180 | W | |||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | to | 150 | ||
| Thermal Resistance-Junction to Ambient (t≤10s) | RθJA | 17 | /W | |||
| Thermal Resistance-Junction to Ambient (Steady-State) | RθJA | 62.5 | /W | |||
| Thermal Resistance-Junction to Case (Steady-State) | RθJC | 0.69 | /W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 100 | 109 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 2 | 2.6 | 4 | V |
| Static Drain-Source On-Resistance | RDS(on)1 | VGS=10V, ID=20A | 3.2 | 4.5 | mΩ | |
| Static Drain-Source On-Resistance | RDS(on)2 | VGS=6V, ID=10A | 4.2 | 6.5 | mΩ | |
| Forward On Voltage | VSD | VGS=0V, IS=1A | 1.2 | V | ||
| Gate resistance | Rg | f=1MHz | 1.3 | Ω | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 6950 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 955 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 124 | pF | ||
| Total Gate Charge (10V) | Qg(10V) | VGS=10V, VDS=50V, ID=20A | 90 | nC | ||
| Gate Source Charge | Qgs | VGS=10V, VDS=50V, ID=20A | 28 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=50V, ID=20A | 19 | nC | ||
| Electrical Characteristics (Ta=25) | ||||||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 27 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 50 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 25 | ns | ||
2504101957_BLUE-ROCKET-BRCS045N10SHRA_C46962479.pdf
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