N Channel MOSFET in TO 263 Package BLUE ROCKET BRCS055N08SHBD Ultra Low On Resistance Fast Switching

Name: N Channel MOSFET in TO 263 Package BLUE ROCKET BRCS055N08SHBD Ultra Low On Resistance Fast Switching
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS055N08SHBD
Availability: InStock

Key Attributes

Model Number: BRCS055N08SHBD

Product Custom Attributes

Drain To Source Voltage:

80V

Current - Continuous Drain(Id):

132A

Operating Temperature -:

-55℃~+150℃

RDS(on):

5.5mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

220pF

Number:

1 N-channel

Output Capacitance(Coss):

1.64nF

Input Capacitance(Ciss):

4.13nF

Pd - Power Dissipation:

173.6W

Gate Charge(Qg):

62nC@10V

Mfr. Part #:

BRCS055N08SHBD

Package:

TO-263

Product Description

Product Overview

The BRCS055N08SHBD is an N-channel MOSFET in a TO-263 plastic package, designed for ultra-low on-resistance and fast switching. This halogen-free product is ideal for boost converters and synchronous rectifiers in consumer electronics, telecommunications, industrial power supplies, and LED backlighting applications.

Product Attributes

Brand: FS (implied by URL http://www.fsbrec.com)
Package Type: TO-263 Plastic Package
Product Type: N-Channel MOSFET
Features: Ultra Low On-Resistance, Fast Switching, Halogen-Free Product
Marking Code: BR (Company Code), 055N08SH (Product Type), **** (Lot No. Code)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDSS				80	V
Drain Current	ID(Tc=25)				132	A
Pulsed Drain Current	IDM				276	A
Gate-Source Voltage	VGS				20	V
Single Pulsed Avalanche Energy (L=0.5mH)	EAS				940.8	mJ
Avalanche Current	IAS				42	A
Total Power Dissipation	PD(Tc=25)				173.6	W
Junction and Storage Temperature Range	TJ,TSTG		-55		150
Thermal Resistance-Junction to Ambient (t10s)	RJA				15	/W
Thermal Resistance-Junction to Case (Steady-State)	RJC			0.72		/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	80	95		V
Zero Gate Voltage Drain Current	IDSS	VDS=85V, VGS=0V			1	A
Gate-Body Leakage Current	IGSS	VGS=20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	2	3	4	V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V, ID=20A		4.3	5.5	m
Static Drain-Source On-Resistance	RDS(on)	VGS=6V, ID=10A		5.8	9	m
Forward On Voltage	VSD	VGS=0V, IS=1A			1.2	V
Gate resistance	Rg	f=1MHz		1.85
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1MHz		4130		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1MHz		1640		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1MHz		220		pF
Total Gate Charge	Qg(10V)	VGS=10V, VDS=40V, ID=20A		62		nC
Gate Source Charge	Qgs	VGS=10V, VDS=40V, ID=20A		20		nC
Gate Drain Charge	Qg d	VGS=10V, VDS=40V, ID=20A		23		nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time	td(on)	VGS=10V, VDS=40V, RL=2, RGEN=3		23		ns
Turn-On Rise Time	tr	VGS=10V, VDS=40V, RL=2, RGEN=3		32		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=40V, RL=2, RGEN=3		35		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=40V, RL=2, RGEN=3		27		ns

Packaging Specifications

Reel Package

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Box Dimensions (mm)
TO-263	800	1	800	6	4,800	36036050

Tube Package

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Box Dimensions (mm)
TO-263	50	20	1,000	5	5,000	55516450

soldering Information

Temperature Profile for IR Reflow Soldering (Pb-Free)

Preheating: 150~180, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temperature: 2605
Time: 101 sec.

2411121056_BLUE-ROCKET-BRCS055N08SHBD_C22449028.pdf

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