P channel Trench FET Power MOSFET BLUE ROCKET SI2301 featuring SOT 23 package and 100 percent Rg tested
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
1 P-Channel
Input Capacitance(Ciss):
415pF@6V
Pd - Power Dissipation:
1.25W
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a P-channel Trench FET Power MOSFET in a SOT-23 plastic package. It is 100% Rg tested and primarily designed for display screen drive applications. This device offers efficient power management with a low on-resistance and robust performance.
Product Attributes
- Package Type: SOT-23
- Technology: Trench FET Power MOSFET
- Testing: 100% Rg Tested
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 8 | V | |||
| Drain Current Continuous | ID | -2.8 | A | |||
| Drain Current Continuous (TA=70) | ID | -1.5 | A | |||
| Pulsed Drain Current | IDM | -10 | A | |||
| Continuous Source Current (Diode Conduction) | IS | -1.6 | A | |||
| Power Dissipation | PD | 1.25 | W | |||
| Power Dissipation (TA=70) | PD | 0.8 | W | |||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Operating Junction Temperature Range | Tj | -55 | +150 | |||
| Electrical Characteristics (Ta=25) | ||||||
| DrainSource Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.45 | -0.95 | V | |
| Static DrainSource OnResistance | RDS(on)1 | VGS=-4.5V, ID=-2.8A | 0.105 | 0.13 | ||
| Static DrainSource OnResistance | RDS(on)2 | VGS=-2.5V, ID=-2.0A | 0.145 | 0.19 | ||
| Zero Gate Voltage Drain Current | IDSS(1) | VDS=-20V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS(2) | VDS=-20V, VGS=0V, Tj=55 | -10 | A | ||
| GateBody Leakage | IGSS | VGS=8V, VDS=0V | 0.1 | A | ||
| State Drain Current | ID(1) | VDS-5V, VGS=-4.5V | -6 | A | ||
| State Drain Current | ID(2) | VDS-5V, VGS=-2.5V | -3 | A | ||
| DrainSource Diode Forward Voltage | VSD | IS=-1.6A, VGS=0V | -0.8 | -1.2 | V | |
| Forward Transconductance | gFS | VDS=-5V, ID=-2.8A | 6.5 | S | ||
| Input Capacitance | Ciss | VDS=-6V, VGS=0, f=1MHz | 415 | pF | ||
| Output Capacitance | Coss | VDS=-6V, VGS=0, f=1MHz | 223 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-6V, VGS=0, f=1MHz | 84 | pF | ||
| TurnOn Delay Time | td(on) | VDD=-6V, RL=6, ID-1A, RG=6, VGEN=-4.5V | 13 | 25 | ns | |
| TurnOn Rise Time | tr | VDD=-6V, RL=6, ID-1A, RG=6, VGEN=-4.5V | 36 | 60 | ns | |
| TurnOff Delay Time | td(off) | VDD=-6V, RL=6, ID-1A, RG=6, VGEN=-4.5V | 42 | 70 | ns | |
| TurnOff Fall Time | tf | VDD=-6V, RL=6, ID-1A, RG=6, VGEN=-4.5V | 34 | 60 | ns | |
Packaging
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Reel Dimension | Box Dimension |
|---|---|---|---|---|---|---|---|
| SOT-23 | 3,000 | 10 | 30,000 | 6 | 180,000 | 78 | 180120180 |
Marking Instructions
Marking Code: A1H. A1 represents the Product Type, and H represents the Company Code.
Temperature Profile for IR Reflow Soldering (Pb-Free)
- Preheating: 25~150, Time: 60~90 sec.
- Peak Temp.: 2455, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions
- Temperature: 2605
- Time: 101 sec.
2410121238_BLUE-ROCKET-SI2301_C305428.pdf
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