Dual N Channel MOSFET BLUE ROCKET BRCS060N04YMQ 40V 60A Halogen Free Package for Power Applications
Key Attributes
Model Number:
BRCS060N04YMQ
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
60.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Number:
2 N-Channel
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
2.3nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
27.3nC@10V
Mfr. Part #:
BRCS060N04YMQ
Package:
PDFN5x6-8A
Product Description
Product Overview
The BRCS060N04YMQ is a Dual N-Channel MOSFET housed in a PDFN5x6A plastic package. This device offers a VDS of 40V and an ID of 60.2A, with low on-resistance options of <6.5m at VGS=10V and <12.5m at VGS=4.5V. It is qualified to AEC-Q101 Standards for high reliability and is a halogen-free product. Designed to meet the stringent requirements of automotive applications, it is suitable for PWM applications, load switching, power management, and LED dimming.
Product Attributes
- Brand: FSBREC
- Package Type: PDFN5x6A
- Product Type: Dual N-Channel MOSFET
- Certifications: AEC-Q101 Qualified, Halogen-Free
- Marking Code: BR, Q, 060N04, **** (Lot No.)
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V |
| Drain Current (Tc=25) | ID(Tc=25) | 60.2 | A |
| Drain Current - Pulsed | IDM | 217 | A |
| Gate-Source Voltage | VGSS | 20 | V |
| Single Pulsed Avalanche Energy | EAS | 240.1 | mJ |
| Avalanche Current | IAS | 24.5 | A |
| Power Dissipation (Tc=25) | PD(Tc=25) | 36 | W |
| Operating and Storage Temperature Range | TJ,Tstg | -55 to 150 | |
| Junction-to-Ambient Thermal Resistance (t10s) | RJA | 45 | /W |
| Junction-to-Ambient Thermal Resistance (Steady-State) | RJA | 80 | /W |
| Junction-to-Case Thermal Resistance (Steady-State) | RJC | 3.5 | /W |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | 45 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.5 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 6.1 | 6.5 | m | |
| VGS=4.5V, ID=10A | 9.1 | 12.5 | m | |||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=1A | 1.2 | V | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 2300 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1MHz | 170 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1MHz | 130 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 2.2 | |||
| Total Gate Charge | Qg | VGS=10V, VDS=20V, ID=10A | 27.3 | nC | ||
| VGS=4.5V, ID=10A | 13.4 | nC | ||||
| Gate Source Charge | Qgs | VGS=10V, VDS=20V, ID=10A | 4.3 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=20V, ID=10A | 6.2 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=20V, RL=2, RGEN=3 | 6.3 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=20V, RL=2, RGEN=3 | 17.1 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=20V, RL=2, RGEN=3 | 28.7 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=20V, RL=2, RGEN=3 | 15.9 | ns |
| Package Dimensions | Unit | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Box Dimensions (mm) |
|---|---|---|---|---|---|---|---|
| PDFN5x6A | / | 5000 | 2 | 10000 | 6 | 60000 | 360x360x50 (Inner Box), 380x335x366 (Outer Box) |
| Test Condition | Temperature | Time |
|---|---|---|
| Resistance to Soldering Heat | 2605 | 101 sec |
| Reflow Soldering Profile (Pb-Free) | Condition | Duration |
|---|---|---|
| Preheating | 150~200 | 60~120 sec |
| Peak Temperature | 2555 | 50.5 sec |
| Cooling Speed | 2~10/sec |
2411121107_BLUE-ROCKET-BRCS060N04YMQ_C36499033.pdf
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