Battery Power Management Transistor BLUE ROCKET BRCS035N03DP N Channel Enhancement Mode Field Effect

Name: Battery Power Management Transistor BLUE ROCKET BRCS035N03DP N Channel Enhancement Mode Field Effect
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS035N03DP
Availability: InStock

Key Attributes

Model Number: BRCS035N03DP

Product Custom Attributes

Drain To Source Voltage:

30V

Current - Continuous Drain(Id):

122A

Operating Temperature -:

-55℃~+150℃

RDS(on):

6.5mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Type:

N-Channel

Number:

1 N-channel

Pd - Power Dissipation:

88W

Gate Charge(Qg):

32nC@10V

Mfr. Part #:

BRCS035N03DP

Package:

TO-252

Product Description

Product Overview

The BRCS035N03DP is an N-Channel Enhancement Mode Field Effect Transistor designed for load switch applications and battery power management. It features a TO-252 plastic package and offers low on-resistance at various gate-source voltages, making it suitable for efficient power control. This product is halogen-free.

Product Attributes

Brand: fsbrec
Product Type: N-Channel Enhancement Mode Field Effect Transistor
Package Type: TO-252 Plastic Package
Certifications: HF Product (Halogen-Free)
Marking Code: BR, 035N03, **** (Lot No.)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS	(VGS = 20V)			30	V
Drain Current	ID(Tc=25)				122	A
Drain Current - Pulsed	IDM				260	A
Gate-Source Voltage	VGSS				20	V
Single Pulsed Avalanche Energy	EAS				281	mJ
Avalanche Current	IAS				26.5	A
Power Dissipation	PD(Tc=25)				88	W
Operating and Storage Temperature Range	TJ,Tstg		-55		150
Junction-to-Ambient (t10s)	RJA				22	/W
Junction-to-Ambient (Steady-State)				50		/W
Junction-to-Case (Steady-State)	RJC				1.42	/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	30	33		V
Zero Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0V			1	A
Gate-Body Leakage Current	IGSS	VGS=20V, VDS=0V			0.1	A
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250A	1.0	1.7	3.0	V
Static Drain-Source On-Resistance	RDS(on)1	VGS=10V, ID=20A		3.4	3.5	m
Static Drain-Source On-Resistance	RDS(on)2	VGS=4.5V, ID=10A		5.0	6.5	m
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=1A			1.4	V
Input Capacitance	Ciss	VDS=25V, VGS=0V, f=1MHz		2200		pF
Output Capacitance	Coss	VDS=25V, VGS=0V, f=1MHz		145		pF
Reverse Transfer Capacitance	Crss	VDS=25V, VGS=0V, f=1MHz		210		pF
Gate resistance	Rg	VGS=0V, VDS=0V, f=1MHz		2.0
Electrical Characteristics (Ta=25)
Total Gate Charge	Qg(10V)	VGS=10V, VDS=15V, ID=20A		32		nC
Total Gate Charge	Qg(4.5V)	VGS=4.5V, VDS=15V, ID=10A		15		nC
Gate Source Charge	Qgs	VGS=10V, VDS=15V, ID=20A		5.2		nC
Gate Drain Charge	Qgd	VGS=10V, VDS=15V, ID=20A		6.5		nC
Turn-On Delay Time	td(on)	VGS=10V, VDS=15V, RL=0.75, RGEN=3		8.5		ns
Turn-On Rise Time	tr	VGS=10V, VDS=15V, RL=0.75, RGEN=3		4.2		ns
Turn-Off Delay Time	td(off)	VGS=10V, VDS=15V, RL=0.75, RGEN=3		30		ns
Turn-Off Fall Time	tf	VGS=10V, VDS=15V, RL=0.75, RGEN=3		5.7		ns

Package Dimensions: See attached diagram.

Soldering Profile (Pb-Free):

Preheating: 150~180, 60~90 sec
Peak Temp.: 2455, Duration: 50.5 sec
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

Temp.: 2605
Time: 101 sec

Packaging Specifications:

Reel Package: TO-252, 2,500 Units/Reel
Tube Package: TO-251/252, 75 Units/Tube

2410121231_BLUE-ROCKET-BRCS035N03DP_C22356959.pdf

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