High Speed Line Driver P Channel MOSFET BORN SI2301S Featuring Low Gate Source Voltage Control
Key Attributes
Model Number:
SI2301S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-
RDS(on):
140mΩ@3.3V,1A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
25pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
177pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.3nC@10V
Mfr. Part #:
SI2301S
Package:
SOT-23
Product Description
Product Overview
The SI2301S is a P-Channel Enhancement-Mode MOSFET designed for various switching applications. It features low RDS(on) at VGS=-4.5V, -3.3V logic level control, and comes in a Pb-Free, RoHS Compliant SOT23 package. This MOSFET is suitable for high-side load switching, general switching circuits, and high-speed line drivers.
Product Attributes
- Package: SOT23
- Compliance: PbFree, RoHS Compliant
- Type: P Channel MOSFET, Enhancement-Mode
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Common Ratings (TA=25C Unless Otherwise Noted) | ||||||
| VGS | Gate-Source Voltage | ±10 | V | |||
| (BR)DSS | Drain-Source Breakdown Voltage | -20 | V | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -50 | to | 150 | °C | |
| ID (Pulse) | Pulse Drain Current | Tested¹ TA=25°C | -9 | A | ||
| ID | Continuous Drain Current | TA=25°C | -2.3 | A | ||
| ID | Continuous Drain Current | TA=70°C | -1.8 | A | ||
| PD | Maximum Power Dissipation | TA=25°C | 1 | W | ||
| PD | Maximum Power Dissipation | TA=70°C | 0.8 | W | ||
| θJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 125 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250µA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-20V, VGS=0V (TA=25°C) | -1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-16V, VGS=0V (TA=125°C) | -100 | µA | ||
| IGSS | Gate-Body Leakage Current | VGS=±10V, VDS=0V | ±100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=-250µA | -0.4 | -0.6 | -1.0 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-2A | 125 | 140 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-3.3V, ID=-1A | 140 | 170 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-2.5V, ID=-1A | 170 | 210 | mΩ | |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | 177 | pF | ||
| Coss | Output Capacitance | 30 | pF | |||
| Crss | Reverse Transfer Capacitance | 25 | pF | |||
| Qg | Total Gate Charge | VDS=-10V, ID=-2A, VGS=-4.5V | 5.3 | nC | ||
| Qgs | Gate Source Charge | 0.7 | nC | |||
| Qgd | Gate Drain Charge | 1.4 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn on Delay Time | VDD=-10V, ID=-2A, RG=3.3Ω, VGS=-4.5V | 11 | ns | ||
| tr | Turn on Rise Time | 32 | ns | |||
| td(off) | Turn Off Delay Time | 25 | ns | |||
| tf | Turn Off Fall Time | 38 | ns | |||
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current (Body Diode) | TA=25°C | -1.2 | A | ||
| VSD | Forward on voltage | Tj=25°C, ISD=-1A, VGS=0V² | -0.83 | -1.2 | V | |
Notes:
¹ Pulse width limited by maximum allowable junction temperature.
² Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Order Information:
| Product | Package | Marking | Packing | Min Unit Quantity |
|---|---|---|---|---|
| SI2301S | SOT23 | A1sHB | 3000PCS/Reel | 3000PCS |
2410121608_BORN-SI2301S_C431492.pdf
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