252 package N channel MOSFET BLUE ROCKET BRCS250N10SDPQ with AEC Q101 qualification and 37A continuous ID

Key Attributes
Model Number: BRCS250N10SDPQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
37A
RDS(on):
35mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
820pF@25V
Pd - Power Dissipation:
68W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
BRCS250N10SDPQ
Package:
TO-252
Product Description

Product Overview

The BRCS250N10SDPQ is an N-channel MOSFET in a TO-252 plastic package, designed for high reliability and automotive applications. It offers a VDS of 100V and a continuous ID of 37A. This HF product is qualified to AEC-Q101 standards and is suitable for boost converters and synchronous rectifiers in consumer electronics, telecommunications, industrial power supplies, and LED backlighting. Its low on-resistance at both 10V (25m typ.) and 4.5V (35m typ.) makes it efficient for demanding applications.

Product Attributes

  • Brand: FS (implied by URL)
  • Product Code: BRCS250N10SDPQ
  • Package: TO-252 Plastic Package
  • Channel Type: N-Channel MOSFET
  • Certifications: AEC-Q101 Qualified, HF Product (Halogen-Free)
  • Marking: BR Q (Company Code + Automotive Halogen-Free Identifier), 250N10S (Product Type Code), **** (Lot No. Code)
  • Origin: China (implied by Chinese text)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 100 V
Drain Current (Tc=25) ID(Tc=25) 37 A
Drain Current - Pulsed IDM 117 A
Gate-Source Voltage VGS 20 V
Avalanche Current IAS 7 A
Single Pulsed Avalanche Energy EAS 14.4 mJ
Power Dissipation (Tc=25) PD(Tc=25) 68 W
Storage Temperature Range Tstg -55 150
Thermal Resistance-Junction to Ambient (t 10s) RJA 20 /W
Thermal Resistance-Junction to Ambient (Steady-State) RJA 50 /W
Thermal Resistance-Junction to Case (Steady-State) RJC 1.84 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 100 109 V
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 0.1 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 20 25 m
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 25 35 m
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 820 pF
Output Capacitance Coss VGS=0V, f=1MHz 475 pF
Reverse Transfer Capacitance Crss VGS=0V, f=1MHz 35 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.9
Total Gate Charge (10V) Qg(10V) VGS=10V, VDS=50V, ID=9A 17 nC
Total Gate Charge (4.5V) Qg(4.5V) VGS=4.5V, VDS=50V, ID=9A 9 nC
Gate Source Charge Qgs VGS=10V, VDS=50V, ID=9A 3 nC
Gate Drain Charge Qgd VGS=10V, VDS=50V, ID=9A 3.5 nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time td(on) VGS=10V, VDS=50V, RL=5.5, RGEN=3.0 5 ns
Turn-On Rise Time tr VGS=10V, VDS=50V, RL=5.5, RGEN=3.0 3.2 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=50V, RL=5.5, RGEN=3.0 21 ns
Turn-Off Fall Time tf VGS=10V, VDS=50V, RL=5.5, RGEN=3.0 3 ns
Package Dimensions Dimension (mm)
TO-252 Refer to page 7 for detailed dimensions.
Packaging Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (mm)
REEL Package 2,500 2 5,000 6 30,000 1316 (Reel), 36036050 (Inner Box), 380335366 (Outer Box)
TUBE Package 75 48 3,600 5 18,000 52620.55.25 (Tube), 55516450 (Inner Box), 575290180 (Outer Box)
Test Condition Temperature () Time (sec)
Resistance to Soldering Heat 260 5 10 1
IR Reflow Soldering (Pb-Free) - Preheating 150200 60120
IR Reflow Soldering (Pb-Free) - Peak Temp. 255 5 5 0.5
IR Reflow Soldering (Pb-Free) - Cooling Speed 210

2411121107_BLUE-ROCKET-BRCS250N10SDPQ_C36499019.pdf

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