Switching N Channel MOSFET BORN 2N7002KN with Low On State Resistance and Logic Level Compatibility
Key Attributes
Model Number:
2N7002KN
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
350mA
RDS(on):
1.5Ω@10V;1.7Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Output Capacitance(Coss):
4.6pF
Input Capacitance(Ciss):
23.6pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
1nC@10V
Mfr. Part #:
2N7002KN
Package:
DFN1006-3L
Product Description
Product Overview
The BORN SEMICONDUCTOR 2N7002KN is an N-Channel MOSFET designed for efficient switching applications. Featuring a VDS of 60V and ID of 0.35A, it offers low on-state resistance (RDS(ON) TYP 1.5 @VGS=10V, TYP 1.7 @VGS=4.5V) and very fast switching speeds. Its logic-level compatibility and Trench MOSFET technology, combined with ElectroStatic Discharge (ESD) protection exceeding 2kV HBM, make it suitable for relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.
Product Attributes
- Brand: BORN SEMICONDUCTOR
- Product Type: N-Channel MOSFET
- Technology: Trench MOSFET
- ESD Protection: > 2kV HBM
- Logic-level compatible: Yes
- Switching Speed: Very fast
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| ID | Continuous Drain Current | 0.35 | A | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=0.3A | 1.5 | 2 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=0.2A | 1.7 | 2.4 | ||
| ESD Protection | >2 | kV HBM | ||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (@TA=25C unless otherwise noted) | 60 | V | ||
| VGS | Gate-Source Voltage | (@TA=25C unless otherwise noted) | 20 | V | ||
| ID | Continuous Drain Current | (@TA=25C unless otherwise noted) | 0.35 | A | ||
| IDM | Peak Continuous Drain Current | (@TA=25C unless otherwise noted) | 0.9 | A | ||
| PD | Maximum Power Dissipation | (@TA=25C unless otherwise noted) | 250 | mW | ||
| TJ | Junction Temperature | (@TA=25C unless otherwise noted) | -55 | +150 | C | |
| Tstg | Storage Temperature | (@TA=25C unless otherwise noted) | -55 | +150 | C | |
| RJA | Junction-to-Ambient Thermal Resistance | (@TA=25C unless otherwise noted) | 500 | C/W | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 1 | 1.6 | 2.5 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | 1 | uA | ||
| IGSS1 | Gate Body Leakage Current | VGS=20V, VDS=0V | 10 | uA | ||
| IGSS2 | Gate Body Leakage Current | VGS=10V, VDS=0V | 1 | uA | ||
| IGSS3 | Gate Body Leakage Current | VGS=5V, VDS=0V | 0.3 | uA | ||
| RDS(on) | Drain-Source On-State Resistance | VGS=10V, ID=0.3A | 1.5 | 2 | ||
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5V, ID=0.2A | 1.7 | 2.4 | ||
| gfs | Forward Transconductance | VDS=10V, ID=0.2A | 0.6 | S | ||
| RG | Internal Gate Resistance (AC) | f=2.5MHz | 2.5 | |||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | 23.6 | pF | ||
| Coss | Output Capacitance | VDS=10V, VGS=0V, f=1MHz | 4.6 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=10V, VGS=0V, f=1MHz | 3 | pF | ||
| Qg | Gate to Drain Charge | VDS=30V, VGS=10V, ID=0.2A | 1 | nC | ||
| Qgs | Gate to Source Charge | VDS=30V, VGS=10V, ID=0.2A | 0.12 | nC | ||
| Qgd | Gate to Drain Charge | VDS=30V, VGS=10V, ID=0.2A | 0.18 | nC | ||
| Td(on) | Turn-on delay time | VDS=50V, VGS=10V, ID=0.2A, RG=6 | 4.7 | ns | ||
| Tr | Turn-on Rise time | VDS=50V, VGS=10V, ID=0.2A, RG=6 | 4.3 | ns | ||
| Td(off) | Turn-Off Delay Time | VDS=50V, VGS=10V, ID=0.2A, RG=6 | 6.9 | ns | ||
| Tf | Turn-Off Fall time | VDS=50V, VGS=10V, ID=0.2A, RG=6 | 2.9 | ns | ||
| Source-Drain Diode | ||||||
| VSD | Diode Forward Voltage | IS=0.2A, VGS=0V | 0.87 | 1.2 | V | |
| Ordering Information | ||||||
| Order Code | Package | Marking | Base qty | Delivery mode | ||
| 2N7002KN | DFN1006-3L | 72K | 10K | Tape and reel | ||
| Package Dimensions (DFN1006-3L) | ||||||
| Symbol | MIN. | Typ. | MAX. | Unit | ||
| A | 0.40 | 0.50 | mm | |||
| A2 | 0.00 | 0.05 | mm | |||
| b1 | 0.10 | 0.15 | 0.20 | mm | ||
| b2 | 0.20 | 0.25 | 0.30 | mm | ||
| D | 0.95 | 1.00 | 1.05 | mm | ||
| E | 0.55 | 0.60 | 0.65 | mm | ||
| e1 | 0.350BSC | mm | ||||
| e2 | 0.675BSC | mm | ||||
| L1 | 0.20 | 0.30 | 0.40 | mm | ||
| L2 | 0.40 | 0.50 | 0.60 | mm | ||
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2506201720_BORN-2N7002KN_C49009905.pdf
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