Surface Mount N Channel MOSFET BORN 2N7002 Featuring Low RDS ON and 0.2A Continuous Drain Current
Key Attributes
Model Number:
2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
7.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description
Product Overview
The 2N7002 is a N-Channel Enhancement-Mode MOSFET designed for surface mount applications, featuring a SOT-23 package. It offers a super high-density cell design for extremely low RDS(ON) and is characterized by its reliable and rugged construction. Key electrical characteristics include a Drain-Source Voltage of 60V and a continuous Drain Current of 0.2A. The device exhibits a low static drain-source on-resistance, with a maximum of 7.5 at VGS = 10V and ID = 0.5A, or at VGS = 5V and ID = 0.05A.
Product Attributes
- Product Name: 2N7002 MOSFET
- Type: N-Channel Enhancement-Mode MOSFET
- Package: SOT-23
- Certifications: ROHS
- Origin: Taiwan (implied by www.born-tw.com)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 0.2 | A | |||
| Power Dissipation | PD | 0.225 | W | |||
| Storage Temperature | Tstg | -50 | 150 | |||
| Junction Temperature | TJ | -50 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 556 | /W | |||
| Off Characteristics | ||||||
| Drain to Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | - | - | V |
| Zero-Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | µA |
| Gate Body Leakage Current, Forward | IGSSF | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Body Leakage Current, Reverse | IGSSR | VGS=-20V, VDS=0V | - | - | -100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250µA | 1 | - | - | V |
| Static Drain-source On-Resistance | RDS(ON) | VGS =10V, ID =0.5A | - | - | 7.5 | Ω |
| Static Drain-source On-Resistance | RDS(ON) | VGS =5V, ID =0.05A | - | - | 7.5 | Ω |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, IS=0.2A | - | - | 2.5 | V |
Notes: *Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.
Package Outline: SOT-23 (mm)
2410121332_BORN-2N7002_C306856.pdf
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