N Channel Enhancement Mode Transistor BLUE ROCKET BRCS120N02LZJ with 150 Degree Junction Temperature
Key Attributes
Model Number:
BRCS120N02LZJ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
460pF
Pd - Power Dissipation:
2.8W
Gate Charge(Qg):
-
Mfr. Part #:
BRCS120N02LZJ
Package:
DFN-6L(2x2)
Product Description
Product Overview
The BRCS120N02LZJ is an N-Channel Enhancement Mode Field Effect Transistor designed for low-voltage applications. It features a DFN22B-6L plastic package and is a Halogen-Free product. This transistor is suited for high-efficiency switching in power management for portable and battery-operated products, as well as automotive circuits and DC/DC converters.
Product Attributes
- Brand: FSBREC
- Product Type: N-Channel Enhancement Mode Field Effect Transistor
- Package Type: DFN22B-6L Plastic Package
- Certifications: Halogen-Free Product
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V |
| Drain Current (Tc=25) | ID | 8 | A |
| Gate-Source Voltage | VGS | 12 | V |
| Avalanche Current | IAS | 12 | A |
| Single Pulsed Avalanche Energy | EAS | 115 | mJ |
| Power Dissipation (Tc=25) | PD | 2.8 | W |
| Junction Temperature Range | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 | |
| Maximum Junction-to-Ambient (t10s) | RJA | 45 | /W |
| Maximum Junction-to-Ambient (Steady-State) | RJA | 80 | /W |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | 22 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | A | ||
| Zero Gate Voltage Drain Current (TJ=150) | IDSS | VDS=20V, TJ=150 | 50 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V, VDS=0V | 0.1 | A | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=8.0A | 12.5 | 14 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=8.0A | 13.9 | 20 | m | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.4 | 0.8 | 1.2 | V |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IF=1.0A | 0.7 | 1.2 | V | |
| Signal Source Resistance | Rg | F=1MHz | 3.3 | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 460 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 75 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 65 | pF | ||
| Turn-On Delay Time | td(on) | VDS=10V, VGS=4.5V, RL=1.25, RGEN=3 | 2.7 | ns | ||
| Turn-On Rise Time | tr | VDS=10V, VGS=4.5V, RL=1.25, RGEN=3 | 3 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=10V, VGS=4.5V, RL=1.25, RGEN=3 | 37 | ns | ||
| Turn-Off Fall Time | tf | VDS=10V, VGS=4.5V, RL=1.25, RGEN=3 | 7 | ns | ||
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=8A | 12.5 | nC | ||
| Gate-Source Charge | Qgs | VDS=10V, VGS=4.5V, ID=8A | 1.2 | nC | ||
| Gate-Drain Charge | Qg | VDS=10V, VGS=4.5V, ID=8A | 2.7 | nC |
| Package Dimensions | Unit | Dimension |
|---|---|---|
| DFN22B-6L | mm | 2.0 x 2.0 |
| Packaging Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Reel Dimensions | Inner Box Dimensions | Outer Box Dimensions |
|---|---|---|---|---|---|---|---|---|
| Reel | 4,000 | 10 | 40,000 | 4 | 160,000 | 78 | 210205205 | 445230435 |
2410121231_BLUE-ROCKET-BRCS120N02LZJ_C22448986.pdf
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