Low RDS on N channel MOSFET BLUE ROCKET BRD15N10 designed for DC DC converters and automotive circuits
Key Attributes
Model Number:
BRD15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
57pF
Input Capacitance(Ciss):
1.12nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
5.8nC@10V
Mfr. Part #:
BRD15N10
Package:
TO-252
Product Description
Product Overview
The BRD15N10 is an N-channel MOSFET in a TO-252 plastic package. It features low RDS(on), low gate charge, low Crss, and fast switching speeds. This MOSFET is well-suited for low-voltage applications, including automotive circuits, DC/DC converters, and high-efficiency power management in portable and battery-operated products.
Product Attributes
- Brand: FS (implied by fsbrec.com)
- Package Type: TO-252
- Channel Type: N-Channel MOSFET
- Marking Code: BR 15N10
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V |
| Drain Current (Tc=25) | ID(Tc=25) | 15 | A |
| Drain Current (Tc=100) | ID(Tc=100) | 10 | A |
| Drain Current - Pulsed | IDM | 60 | A |
| Gate-Source Voltage | VGS | 20 | V |
| Single Pulsed Avalanche Energy | EAS | 33 | mJ |
| Avalanche Current | IAS | 9.1 | A |
| Power Dissipation (Tc=25) | PD(Tc=25) | 39 | W |
| Operating and Storage Temperature Range | Tj Tstg | -55150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1.0 | A | ||
| Zero Gate Voltage Drain Current (TJ=125) | IDSS | VDS=100V, VGS=0V | 50 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 2.2 | 3 | V |
| Total gate charge | Qg (10V) | VDS=50V, ID=5A, VGS=10V | 5.8 | nC | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=8.5A | 80 | 90 | m | |
| Static Drain-Source On-Resistance (TJ=125) | RDS(on) | VGS=10V, ID=8.5A | 152 | m | ||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=17A | 0.8 | V | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 1120 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 57 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 35 | pF | ||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=50V, RL=10, RGEN=3 | 6 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=50V, RL=10, RGEN=3 | 2.5 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=50V, RL=10, RGEN=3 | 18 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=50V, RL=10, RGEN=3 | 2.5 | ns |
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Dimension (unit: mm) |
|---|---|---|---|---|---|---|
| TO-252 (REEL) | 2,500 | 2 | 5,000 | 5 | 25,000 | 1316 |
| TO-251/252 (TUBE) | 75 | 48 | 3,600 | 5 | 18,000 | 52620.55.25 |
2410121234_BLUE-ROCKET-BRD15N10_C358390.pdf
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