N Channel Enhancement Mode Field Effect Transistor BLUE ROCKET BRCS7002K2ZK with ESD Protection and DFN1006 3L Package
Key Attributes
Model Number:
BRCS7002K2ZK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
360mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9Ω@5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
25pF
Pd - Power Dissipation:
360mW
Gate Charge(Qg):
700pC@4.5V
Mfr. Part #:
BRCS7002K2ZK
Package:
DFN1006-3L
Product Description
Product Overview
The BRCS7002K2ZK is an N-Channel Enhancement Mode Field Effect Transistor designed for general-purpose switching and phase control applications. It features a sensitive gate trigger current, low holding current, and ESD protection up to 2KV. This halogen-free product is housed in a DFN1006-3L plastic package.
Product Attributes
- Brand: fsbrec
- Product Type: N-Channel Enhancement Mode Field Effect Transistor
- Package Type: DFN1006-3L
- Certifications: Halogen-free (HF Product)
- ESD Protection: Up to 2KV
Technical Specifications
| Parameter | Symbol | Rating Unit | Value |
|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||
| Drain-Source Voltage | VDSS | V | 60 |
| Drain-Gate Voltage | VDGR | V | 60 |
| Drain Current - Continuous (Ta=25) | IDTa=25 | mA | 300 |
| Drain Current - Continuous (Ta=85) | IDTa=85 | mA | 210 |
| Drain Current - Pulsed (Note 1) | IDM | mA | 1200 |
| Gate-Source Voltage - Continuous | VGSS | V | 20 |
| Power Dissipation | PD | mW | 360 |
| Junction Temperature Range | Tj | -55150 | |
| Storage Temperature Range | Tstg | -55150 | |
| Maximum Junction-to-Ambient | RJA | /W | 350 |
| Maximum Junction-to-Solder Point | RJSP | /W | 92 |
| Electrical Characteristics (Ta=25) | |||
| DrainSource Breakdown Voltage | VDSS | V | 60 (VGS=0, ID=250A) |
| Zero Gate Voltage Drain Current | IDSS | A | 1.0 (VGS=0, VDS=60V) |
| Gate-Source Leakage | IGSS | A | 10 (VDS=0V, VGS=20V) |
| Static Drain-Source On-Resistance (1) | RDS(on)(1) | 1.7 (VGS=10V, ID=0.5A) | |
| Static Drain-Source On-Resistance (2) | RDS(on)(2) | 1.9 (VGS=5V, ID=0.05A) | |
| Drain-Source Diode Forward Voltage | VSD | V | 1.35 (VGS=0V, IS=250mA) |
| Gate-Source Threshold Voltage | VGS(th) | V | 1.01.42.0 (VDS=VGS, ID=250uA) |
| Input Capacitance | Ciss | pF | 25 (VGS=0V, f=1MHz, VDS=20V) |
| Output Capacitance | Coss | pF | 11 (VGS=0V, f=1MHz, VDS=20V) |
| Reverse Transfer Capacitance | Crss | pF | 2.5 (VGS=0V, f=1MHz, VDS=20V) |
| Total Gate Charge | QG(TOT) | nC | 0.7 (VGS=4.5V, VDS=10V; ID=200 mA) |
| Threshold Gate Charge | QG(TH) | nC | 0.1 (VGS=4.5V, VDS=10V; ID=200 mA) |
| Gate-to-Source Charge | QGS | nC | 0.3 (VGS=4.5V, VDS=10V; ID=200 mA) |
| Gate-to-Drain Charge | QGD | nC | 0.1 (VGS=4.5V, VDS=10V; ID=200 mA) |
| Turn-On Delay Time | td(ON) | ns | 12.2 (VGS =10V, VDD=25V, ID=500mA, RG=25) |
| Rise Time | tr | ns | 9.0 (VGS =10V, VDD=25V, ID=500mA, RG=25) |
| Turn-Off Delay Time | td(OFF) | ns | 55.8 (VGS =10V, VDD=25V, ID=500mA, RG=25) |
| Fall Time | tf | ns | 29 (VGS =10V, VDD=25V, ID=500mA, RG=25) |
| Marking Instructions | |||
| Product Type Code | 702K2 | ||
| Packaging Specifications | |||
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box |
| DFN1006-3L | 10,000 | 10 | 100,000 |
2410121236_BLUE-ROCKET-BRCS7002K2ZK_C914084.pdf
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