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quality High reliability BLUE ROCKET BRCS3400MA N Channel MOSFET in compact SOT23 package for load switching factory
quality High reliability BLUE ROCKET BRCS3400MA N Channel MOSFET in compact SOT23 package for load switching factory

High reliability BLUE ROCKET BRCS3400MA N Channel MOSFET in compact SOT23 package for load switching

Key Attributes
Model Number: BRCS3400MA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
1.03nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
BRCS3400MA
Package:
SOT-23
Product Description

Product Overview

The BRCS3400MA is an N-Channel MOSFET in a SOT-23 plastic package, designed for efficient load switching and Pulse Width Modulation (PWM) applications. This halogen-free product offers a Drain-Source Voltage (VDS) of 30V and a continuous Drain Current (ID) of 5.8A at VGS=10V. Key electrical characteristics include a low Static DrainSource OnResistance (RDS(on)) of less than 28m at VGS=10V and a Gate Threshold Voltage (VGS(th)) typically between 0.7V and 1.4V. Its compact SOT-23 package and robust performance make it suitable for various electronic designs.

Product Attributes

  • Product Type: N-Channel MOSFET
  • Package Type: SOT-23 Plastic Package
  • Halogen Free: Yes
  • Marking Code: A0H

Technical Specifications

Parameter Symbol Rating/Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS 30 V
Drain Current Continuous ID 5.8 A
Drain Current Continuous (Ta=70) ID(Ta=70) 4.9 A
Pulsed Drain Current IDM 30 A
Gate-Source Voltage VGS 12 V
Total Power Dissipation PD 1.4 W
Total Power Dissipation (Ta=70) PD(Ta=70) 1.0 W
Operating and Storage Junction Temperature Range TJ, TSTG -55 150
Electrical Characteristics (Ta=25)
DrainSource Breakdown Voltage BVDSS VGS=0V, ID=250A 30 V
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 A
Zero Gate Voltage Drain Current (TJ=55) IDSS VDS=24V, VGS=0V 5 A
GateBody Leakage IGSS VGS=12V, VDS=0V 0.1 A
OnState Drain Current ID(on) VGS=4.5V, VDS=5V 30 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.7 1.4 V
Static DrainSource OnResistance RDS(on)(1) VGS=10V, ID=5.8A 22.8 28 m
Static DrainSource OnResistance RDS(on)(2) VGS=10V, ID=5.8A, TJ=125 32 39 m
Static DrainSource OnResistance RDS(on)(3) VGS=4.5V, ID=5A 27.3 33 m
Static DrainSource OnResistance RDS(on)(4) VGS=2.5V, ID=4A 43.3 52 m
Forward Transconductance gFS VDS=5V, ID=5A 10 15 S
DrainSource Diode Forward Voltage VSD VGS=0V, IS=1A 0.77 1 V
Electrical Characteristics (Ta=25)
Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz 823 1030 pF
Output Capacitance Coss VDS=15V, VGS=0V, f=1MHz 99 pF
Reverse Transfer Capacitance Crss VDS=15V, VGS=0V, f=1MHz 77 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.2 3.6
Total Gate Charge Qg VGS=4.5V, VDS=15V, ID=5.8A 9.7 12 nC
Gate Source Charge Qgs VGS=4.5V, VDS=15V, ID=5.8A 1.6 nC
Gate Drain Charge Qgd VGS=4.5V, VDS=15V, ID=5.8A 3.1 nC
TurnOn Delay Time td(on) VGS=10V, RL=2.7, VDS=15V, RGEN=3 3.3 5 ns
TurnOn Rise Time tr VGS=10V, RL=2.7, VDS=15V, RGEN=3 4.8 7 ns
TurnOff Delay Time td(off) VGS=10V, RL=2.7, VDS=15V, RGEN=3 26.3 40 ns
TurnOff Fall Time tf VGS=10V, RL=2.7, VDS=15V, RGEN=3 4.1 6 ns
Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/s 16 20 ns
Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/s 8.9 12 nC

2410121236_BLUE-ROCKET-BRCS3400MA_C19190015.pdf

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