N channel MOSFET BLUE ROCKET BRCS150N10SDP designed for automotive and portable battery powered devices

Key Attributes
Model Number: BRCS150N10SDP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
55A
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
600pF
Input Capacitance(Ciss):
1.14nF
Pd - Power Dissipation:
73W
Gate Charge(Qg):
32.5nC@10V
Mfr. Part #:
BRCS150N10SDP
Package:
TO-252
Product Description

Product Overview

The BRCS150N10SDP is an N-channel MOSFET in a TO-252 plastic package, engineered for high efficiency in low-voltage applications. It features low RDS(on), low gate charge, and low Crss, enabling fast switching speeds. This HF product is ideally suited for automotive circuits, DC/DC converters, and power management in portable and battery-operated devices requiring efficient power conversion.

Product Attributes

  • Brand: FSB
  • Package Type: TO-252
  • Product Type Code: 150N10S
  • Material: Halogen-free product

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 100 V
Drain Current (Tc=25) ID(Tc=25) 55 A
Drain Current - Pulsed IDM 138 A
Gate-Source Voltage VGS ±20 V
Avalanche Current IAS 7.0 A
Single Pulsed Avalanche Energy (L=0.5mH) EAS 24.5 mJ
Power Dissipation (Tc=25) PD(Tc=25) 73 W
Storage Temperature Range Tstg -55 150
Thermal Resistance-Junction to Ambient (t≤10s) RθJA 20 /W
Thermal Resistance-Junction to Ambient (Steady-State) RθJA 50 /W
Thermal Resistance-Junction to Case (Steady-State) RθJC 1.7 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 100 108 V
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1.0 µA
Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.5 1.8 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 13 15
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 18 25
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A 1.2 V
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.5 Ω
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 1140 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz 600 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz 60 pF
Total Gate Charge (10V) Qg(10V) VGS=10V, VDS=50V, ID=20A 32.5 nC
Total Gate Charge (4.5V) Qg(4.5V) VGS=4.5V, VDS=50V, ID=10A 15.5 nC
Gate Source Charge Qgs VGS=10V, VDS=50V, ID=20A 6.5 nC
Gate Drain Charge Qgd VGS=10V, VDS=50V, ID=20A 5 nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time td(on) VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 7 ns
Turn-On Rise Time tr VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 3 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 27 ns
Turn-Off Fall Time tf VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 4 ns
Package Dimensions Dimension (mm)
TO-252 Refer to page 7 of datasheet
Marking Code Details
BR **** 150N10S BR: Company Code
150N10S: Product Type Code
****: Lot No. Code
Packaging Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Box Dimensions (mm)
Reel Package TO-252 2,500 2 5,000 6 30,000 360×360×50
Tube Package TO-251/252 75 48 3,600 5 18,000 555×164×50
Soldering Profile Details
IR Reflow Soldering (Pb-Free) Preheating: 150~180, 60~90 sec
Peak Temp.: 245±5, Duration: 5±0.5 sec
Cooling Speed: 2~10/sec
Resistance to Soldering Heat Test Temp.: 260±5, Time: 10±1 sec

2406271403_BLUE-ROCKET-BRCS150N10SDP_C22449031.pdf

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