N channel MOSFET BLUE ROCKET BRF4N65 TO 220F package with 650V drain source voltage and 4 amp drain current

Name: N channel MOSFET BLUE ROCKET BRF4N65 TO 220F package with 650V drain source voltage and 4 amp drain current
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRF4N65
Availability: InStock

Key Attributes

Model Number: BRF4N65

Product Custom Attributes

Drain To Source Voltage:

650V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

2.7Ω@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

11pF

Number:

1 N-channel

Output Capacitance(Coss):

80pF

Input Capacitance(Ciss):

710pF

Pd - Power Dissipation:

33W

Mfr. Part #:

BRF4N65

Package:

TO-220F

Product Description

Product Overview

The BRF4N65 is an N-channel MOSFET in a TO-220F plastic package, designed for high efficiency switching DC/DC converters and switch mode power supplies. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for demanding power applications. The device offers a Drain-Source Voltage of 650V and a continuous Drain Current of 4.0A at 25.

Product Attributes

Brand: FS (implied by fsbrec.com)
Package Type: TO-220F
Channel Type: N-Channel

Technical Specifications

Parameter	Symbol	Rating Unit	Value	Test Conditions	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDSS	650	-	-	V
Drain Current (Tc=25)	ID(Tc=25)	4.0	-	-	A
Drain Current (Tc=100)	ID(Tc=100)	2.5	-	-	A
Drain Current - Pulsed	IDM	16	-	-	A
Gate-Source Voltage	VGS	30	-	-	V
Single Pulsed Avalanche Energy	EAS	240	-	-	mJ
Repetitive Avalanche Energy	EAR	10	-	-	mJ
Avalanche Current	IAR	4.0	-	-	A
Power Dissipation (Tc=25)	PD(Tc=25)	33	-	-	W
Operating and Storage Temperature Range	TJ,TSTG	-55 to 150	-	-
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	650	-	VGS=0V, ID=250A	V
Zero Gate Voltage Drain Current	IDSS	1	-	VDS=650V, VGS=0V	A
Zero Gate Voltage Drain Current	IDSS	100	-	VDS=480V, TC=125	A
Gate-Body Leakage Current	IGSS	100	-	VGS=30V, VDS=0V	nA
Gate Threshold Voltage	VGS(th)	2.0 to 4.0	-	VDS=VGS, ID=250A	V
Static Drain-Source On-Resistance	RDS(on)	2.7	-	VGS=10V, ID=2.0A
Forward Transconductance	gFS	4.7	-	VDS=40V, ID=2.0A	S
Drain-Source Diode Forward Voltage	VSD	1.4	-	VGS=0V, IS=4.0A	V
Input Capacitance	Ciss	545 to 710	-	VDS=25V, VGS=0V, f=1.0MHz	pF
Output Capacitance	Coss	60 to 80	-	VDS=25V, VGS=0V, f=1.0MHz	pF
Reverse Transfer Capacitance	Crss	8 to 11	-	VDS=25V, VGS=0V, f=1.0MHz	pF
Reverse recovery time	trr	400	-	ISD=4.0A, di/dt=100A/s, VDD=24V, Tj=150	ns
Turn-On Delay Time	td(on)	10 to 30	-	VDD=300V, ID=4.0A, RG=25	ns
Turn-On Rise Time	tr	35 to 80	-	VDD=300V, ID=4.0A, RG=25	ns
Turn-Off Delay Time	td(off)	45 to 100	-	VDD=300V, ID=4.0A, RG=25	ns
Turn-Off Fall Time	tf	40 to 90	-	VDD=300V, ID=4.0A, RG=25	ns

Marking Instructions:

BR: Company Code
4N65: Product Type
****: Lot No. Code (changes with Lot No.)

Packaging Specifications:

BULK Package: TO-220/F, 200 Units/Bag, 10 Bags/Inner Box, 2,000 Units/Inner Box, 5 Inner Boxes/Outer Box, 10,000 Units/Outer Box.
TUBE Package: TO-220/F, 50 Units/Tube, 20 Tubes/Inner Box, 1,000 Units/Inner Box, 5 Inner Boxes/Outer Box, 5,000 Units/Outer Box.

Temperature Profile for Dip Soldering (Pb-Free):

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2555, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

Temperature: 2705
Time: 101 sec.

2410121238_BLUE-ROCKET-BRF4N65_C328293.pdf

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