220FL N channel MOSFET BLUE ROCKET BRF10N60 for high voltage DC DC converter and power switch design
Key Attributes
Model Number:
BRF10N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
730mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
2.04nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
BRF10N60
Package:
TO-220FL
Product Description
Product Overview
The BRFL10N60 is an N-channel MOSFET in a TO-220FL plastic package, designed for high efficiency switching DC/DC converters and power switches. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for demanding power applications.
Product Attributes
- Brand: FSBREC
- Package Type: TO-220FL
- Channel Type: N-Channel
- Lead Free: Yes (indicated by temperature profile for dip soldering)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 600 | V | |||
| Drain Current | ID(Tc=25) | 9.5 | A | |||
| Drain Current | ID(Tc=100) | 5.7 | A | |||
| Drain Current - Pulsed | IDM | 38 | A | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Single Pulsed Avalanche Energy | EAS | 700 | mJ | |||
| Repetitive Avalanche Energy | EAR | 15.6 | mJ | |||
| Avalanche Current | IAR | 9.5 | A | |||
| Thermal Resistance, Junction to Case | RJC | 2.5 | /W | |||
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | /W | |||
| Power Dissipation | PD(Tc=25) | 50 | W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=600V, VGS=0V | 1 | A | ||
| VDS=480V, TC=125 | 100 | A | ||||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=4.75A | 0.6 | 0.73 | ||
| Forward Transconductance | gFS | VDS=40V, ID=4.75A | 8.0 | S | ||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=9.5A | 1.4 | V | ||
| Total Gate Charge | Qg | ID=10A, VDS=480V, VGS=10V | 45 | nC | ||
| Gate-to-Source Charge | Qgs | 7.5 | nC | |||
| Gate-to-Drain Charge | Qgd | 18.5 | nC | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 1570 | 2040 | pF | |
| Output Capacitance | Coss | 166 | 215 | pF | ||
| Reverse Transfer Capacitance | Crss | 18 | 24 | pF | ||
| Turn-On Delay Time | td(on) | VDD=300V, ID=9.5A, RG=25 | 23 | 55 | ns | |
| Turn-On Rise Time | tr | 69 | 150 | ns | ||
| Turn-Off Delay Time | td(off) | 144 | 300 | ns | ||
| Turn-Off Fall Time | tf | 77 | 165 | ns | ||
Marking Instructions:
- BR: Company Code
- 10N60: Product Type Code
- ****: Lot No. Code (changes with Lot No.)
Packaging Specifications:
- Package Type: TO-220FL
- Units/Tube: 50
- Tubes/Inner Box: 20
- Units/Inner Box: 1,000
- Inner Boxes/Outer Box: 5
- Units/Outer Box: 5,000
Resistance to Soldering Heat Test Conditions:
- Temperature: 2705
- Time: 101 sec.
Temperature Profile for Dip Soldering (Pb-Free):
- Preheating: 25~150, Time: 60~90 sec.
- Peak Temp.: 2555, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
2410121238_BLUE-ROCKET-BRF10N60_C358402.pdf
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