P Channel MOSFET BLUE ROCKET BRCS3401MCQ SOT23 3 Plastic Package Suitable for Automotive Applications

Key Attributes
Model Number: BRCS3401MCQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Number:
1 P-Channel
Input Capacitance(Ciss):
957pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
BRCS3401MCQ
Package:
SOT-23-3
Product Description

Product Overview

The BRCS3401MCQ is a P-Channel MOSFET in a SOT23-3 plastic package, designed for high reliability and automotive applications. It meets AEC-Q101 standards and is a halogen-free product. This device is suitable for use as a load switch or in Pulse Width Modulation (PWM) applications, fulfilling the stringent requirements of automotive environments. Key electrical characteristics include a VDS of -30V, ID of -4.2A at VGS = -10V, and low on-state resistance (RDS(ON)) of less than 60m at VGS = -10V.

Product Attributes

  • Brand: FS (fsbrec.com)
  • Package Type: SOT23-3 Plastic Package
  • Channel Type: P-Channel
  • Certifications: AEC-Q101 Qualified
  • Material: Halogen-Free Product
  • Marking Code: QB1H

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS -30 V
Drain Current Continuous ID -4.2 A
Drain Current- Continuous (Ta=70) ID(Ta=70) -3.5 A
Pulsed Drain Current IDM -30 A
Gate-Source Voltage VGS 12 V
Total Power Dissipation PD A 1.4 W
Total Power Dissipation (Ta=70) PD(Ta=70) A 1.0 W
Operating and Storage Junction Temperature Range TJ, TSTG -55 150
Maximum Junction-to-Ambient RJA (Ta=70) A 125 /W
Maximum Junction-to-Lead RJL C 60 /W
Electrical Characteristics (Ta=25)
DrainSource Breakdown Voltage BVDSS VGS=0V, ID=-250A B -30 V
Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 A
Zero Gate Voltage Drain Current (TJ=55) IDSS VDS=-24V, VGS=0V -5 A
GateBody Leakage IGSS VGS=12V, VDS=0V 0.1 A
OnState Drain Current ID(on) VGS=-4.5V, VDS=-5V -25 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.7 -1 -1.3 V
Static DrainSource OnResistance RDS(on)(1) VGS=-10V, ID=-4.2A 52 60 m
Static DrainSource OnResistance RDS(on)(2) VGS=-10V, ID=-4.2A, TJ=125 75 m
Static DrainSource OnResistance RDS(on)(3) VGS=-4.5V, ID=-4A 60 65 m
Static DrainSource OnResistance RDS(on)(4) VGS=-2.5V, ID=-1A 75 120 m
Forward Transconductance gFS VDS=-5V, ID=-5A 4 8 S
DrainSource Diode Forward Voltage VSD VGS=0V, IS=-1A -0.75 -1.0 V
Electrical Characteristics (Ta=25)
Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz 957 pF
Output Capacitance Coss VDS=-15V, VGS=0V, f=1MHz 115 pF
Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V, f=1MHz 77 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 6
Total Gate Charge Qg VGS=-4.5V, VDS=-15V, ID=-4A 9.4 nC
Gate Source Charge Qgs VGS=-4.5V, VDS=-15V, ID=-4A 2 nC
Gate Drain Charge Qg d VGS=-4.5V, VDS=-15V, ID=-4A 3 nC
TurnOn Delay Time td(on) VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 6.3 ns
TurnOn Rise Time tr VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 3.2 ns
TurnOff Delay Time td(off) VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 38.2 ns
TurnOff Fall Time tf VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 12 ns
Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/s 20.2 ns
Body Diode Reverse Recovery Charge Qrr IF=-4A, dI/dt=100A/s 11.2 nC

Notes on Ratings:
A: RJA measured with device mounted on 1in FR-4 board with 2oz. Copper, in still air at TA=25C. Application-specific values depend on user's board design. Current rating based on t 10s thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature.
C: RJA is the sum of junction-to-lead (RJL) and lead-to-ambient thermal impedance.
D: Static characteristics (Figures 1-6, 12, 14) obtained using 80s pulses, duty cycle 0.5% max.
E: Tests performed with device mounted on 1in FR-4 board with 2oz. Copper, in still air at TA=25C. SOA curve is a single pulse rating.


2411121107_BLUE-ROCKET-BRCS3401MCQ_C36499009.pdf

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