SOT 23 P Channel MOSFET BLUE ROCKET BRCS5P06MA Featuring Low On Resistance and Halogen Free Material
Key Attributes
Model Number:
BRCS5P06MA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
RDS(on):
103mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
1 P-Channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
885pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
BRCS5P06MA
Package:
SOT-23
Product Description
Product Overview
The BRCS5P06MA is a P-Channel MOSFET designed for SOT-23 plastic package applications. It features ultra-low on-resistance, fast switching speeds, and low on-voltage. This halogen-free product is ideal for PWM applications and load switching.
Product Attributes
- Brand: FSBREC
- Package Type: SOT-23
- Channel Type: P-Channel
- Material: Halogen-free Product
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| DrainSource Voltage | VDSS | -60 | V |
| GateBody Leakage Voltage | VGSS | 20 | V |
| Drain Current - Continuous | ID | -5 | A |
| Power Dissipation (Surface Mounted on FR4 Board, t 10 sec.) | PD | 1.5 | W |
| Operating and Storage Temperature Range | TJ,TSTG | -55150 | |
| Maximum Junction-to-Ambient (t 10s) | RJA | 118.6 | /W |
| Maximum Junction-to-Ambient Steady-State | 161.6 | /W | |
| Maximum Junction-to-Lead Steady-State | RJL | 83.3 | /W |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| DrainSource Breakdown Voltage | V(BR)DSS | VGS=0V ID=-250A | -60 | -63 | V | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -1 | -1.5 | -2.5 | V |
| Static DrainSource OnResistance | RDS(on) | VGS=-10V ID=-2A | 84 | 100 | m | |
| VGS=-4.5V ID=-1A | 103 | 125 | m | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V VGS=0V | -1.0 | A | ||
| GateBody Leakage | IGSS | VGS=-20V | -100 | nA | ||
| VGS=20V | 100 | nA | ||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V IS=-1A TJ=25 | -1.2 | V | ||
| Input Capacitance | Ciss | VDS=-25V VGS=0V f=1.0MHz | 885 | pF | ||
| Output Capacitance | Coss | 90 | pF | |||
| Reverse Transfer Capacitance | Crss | 64 | pF | |||
| Total Gate Charge | Qg | VDS=-30V VGS=-10.0V ID=-5A | 25 | nC | ||
| Gate-to-Source Charge | Qgs | 3 | nC | |||
| Gate-to-Drain Charge | Qgd | 7 | nC | |||
| TurnOn Delay Time | td(on) | VDD=-30V VGS=-10V RL=7.5 RG=3 | 8 | ns | ||
| TurnOn Rise Time | tr | 4 | ns | |||
| TurnOff Delay Time | td(off) | 32 | ns | |||
| TurnOff Fall Time | tf | 7 | ns |
| Package Dimensions | Unit | Dimension |
|---|---|---|
| SOT-23 | mm | Refer to page 6 for detailed dimensions. |
| Marking | Description |
|---|---|
| H5P6 | H: Company Code, 5P6: Product Type |
| Packaging | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Package Dimensions (Reel) | Package Dimensions (Inner Box) | Package Dimensions (Outer Box) |
|---|---|---|---|---|---|---|---|---|
| SOT-23 (Reel) | 3,000 | 10 | 30,000 | 6 | 180,000 | 78 | 180120180 | 390385205 |
| Soldering Profile | Temperature | Time | Cooling Speed |
|---|---|---|---|
| Preheating | 25~150 | 60~90 sec | |
| Peak Temperature | 2455 | 50.5 sec | |
| Soldering Process | 2~10/sec |
| Resistance to Soldering Heat | Temperature | Time |
|---|---|---|
| Test Conditions | 2605 | 101 sec |
2410121902_BLUE-ROCKET-BRCS5P06MA_C914070.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
