NPN Darlington Transistor CBI BCV27T with 40 Volt Collector Base Voltage and Plastic Surface Mounted Package

Key Attributes
Model Number: BCV27T
Product Custom Attributes
Mfr. Part #:
BCV27T
Package:
SOT-523
Product Description

Product Overview

The BCV27T is an NPN Darlington transistor specifically designed for preamplifier input applications. It offers robust performance characteristics suitable for demanding electronic circuits.

Product Attributes

  • Marking: FF
  • Package Outline: Plastic surface mounted package; 3 leads SOT-23

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta = 25 OC)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC 500 mA
Collector Power Dissipation PC 300 mW
Thermal Resistance From Junction To Ambient RJA 416 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
Characteristics at Ta = 25 OC
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 10 V
Collector cut-off current ICBO VCB=30V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=10V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC=1mA 4000
DC current gain hFE(2) VCE=5V, IC=10mA 10000
DC current gain hFE(3) VCE=5V, IC=100mA 20000
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=0.1mA 1 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=0.1mA 1.5 V
Transition frequency fT VCE=5V,IC=50mA, f=100MHz 170 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF

2409302301_CBI-BCV27T_C21714108.pdf

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